Allicdata Part #: | UG3001-T-ND |
Manufacturer Part#: |
UG3001-T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 50V 3A DO201AD |
More Detail: | Diode Standard 50V 3A Through Hole DO-201AD |
DataSheet: | UG3001-T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 50V |
Capacitance @ Vr, F: | 60pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -65°C ~ 150°C |
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UG3001-T is a single-phase silicon rectifier diode with a variety of applications in power distribution and rectification. It is commonly used in AC/DC switching Mode power supplies, solid state drives and various power distribution applications due to its ability to handle large amounts of current with minimal power dissipation. The UG3001-T has a maximum repetitive forward voltage of 400V and a maximum repetitive reverse voltage of 200V. The maximum average forward current is 30A.
The UG3001-T is capable of providing excellent rectification performance and is a suitably cost-effective solution for many applications. It has excellent characteristics over temperature and is well suited for high-temperature automotive applications. The UG3001-T is ideal for use in harsh environmental conditions due to its high thermal and power cycling capability.
The UG3001-T works on the principle that Silicon diodes are capable of carrying current in only one direction. This is known as rectification. By connecting the Anode and Cathode of the UG3001-T to the output of an AC power source, alternating current (AC) is transformed into direct current (DC). The internal structure of the UG3001-T consists of two layers of P-type and N-type silicon, respectively.
In operation, when the Anode of the UG3001-T is made more positive than the Cathode, a forward voltage drop is created across the junction and current is conducted through the diode, forming a closed circuit. When the Cathode is made more positive than the Anode, a reverse voltage drop is created across the junction and no current flows through the diode.
The UG3001-T can be used in many applications due to its low forward voltage and low reverse leakage, making it ideal for power distribution, smelting, welding, and other power supply requirements. The UG3001-T is also well suited for isolated circuits and noise suppression applications, due to its low avalanche energy and low input capacitance.
The UG3001-T single-phase silicon rectifier diode is an excellent choice for power systems design due to its good temperature stability, low thermal resistance, and excellent power handling capabilities. Its small size allows for easier coupling and better space utilization. Moreover, its low forward and reverse voltages, along with low forward reverse current leakage, make it an excellent choice for applications where power efficiency is important.
The specific data is subject to PDF, and the above content is for reference
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