Allicdata Part #: | UG58GHB0G-ND |
Manufacturer Part#: |
UG58GHB0G |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 5A DO201AD |
More Detail: | Diode Standard 600V 5A Through Hole DO-201AD |
DataSheet: | UG58GHB0G Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.11791 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 2.1V @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 20ns |
Current - Reverse Leakage @ Vr: | 30µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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Diodes - Rectifiers - Single
UG58GHB0G Application Field and Working Principle
The UG58GHB0G is a single recticifier diode designed for use in electronic equipments, such as power supplies and digital circuits. This device provides an inexpensive and reliable means of providing protection from excessive voltage fluctuations and rectification of AC current. It has a wide operating temperature range from -40 to +85℃ with a maximum power dissipation of 1.5W. It is capable of withstanding reverse voltages up to 200V.The UG58GHB0G consists of a PN junction configured as a diode. When a forward bias voltage is applied across the PN junction, an electric field is created across the junction region, which causes electrons to flow from the anode to the cathode and holes to flow from the cathode to the anode. This process of "forward conduction" allows the diode to rectify AC current, allowing current to flow in one direction only.The reverse bias voltage prevents current from flowing, due to the depletion layer present at the PN junction. The depletion layer is an built-in part of the diode and is formed when the applied voltage is reverse biased. Under reverse bias, the electric field is reversed, causing electrons to be repelled from the anode and holes to be repelled from the cathode. This creates a barrier at the PN junction, preventing current from flowing. Under reverse bias, the UG58GHB0G can withstand up to 200V of reverse voltage without any damage.The UG58GHB0G is used in a wide variety of applications, such as power supplies, including DC-DC converters and AC-DC converters, motor speed controls, audio, telephone and communication circuits, data transfer and logic circuits. This device is also used in automotive and lighting systems, for EMC and ESD protection, and for electronic current limiting.The UG58GHB0G is a low cost and reliable rectifier diode. It has a wide operating temperature range from -40 to +85℃, is able to handle up to 1.5 W of power dissipation, and can withstand reverse voltages up to 200V. This device is suitable for use in a wide range of electronic equipment and for EMC and ESD protection.The specific data is subject to PDF, and the above content is for reference
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