Allicdata Part #: | UG8DT-E3/45GI-ND |
Manufacturer Part#: |
UG8DT-E3/45 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 8A TO220AC |
More Detail: | Diode Standard 200V 8A Through Hole TO-220AC |
DataSheet: | UG8DT-E3/45 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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The UG8DT-E3/45 is a rectifier diode produced by Diodes Inc. It is a single rectifier diode, which means that it is used for the conversion of alternating current (AC) to direct current (DC). It is suitable for applications where high speed switching is required. The rectifier diode performs rectification, which is the conversion of AC to DC.The UG8DT-E3/45 has a wide variety of uses and applications. It is often used in power supplies, rectifiers, and switched-mode power supplies. It is also used in motor control systems, automotive electronics, and in telecommunications. In addition, it is used in high speed switching applications, including computers, servers, and data centers.The UG8DT-E3/45 has a maximum forward current rating of 45 Amps, a reverse voltage of 150V, and a surge current rating of 10 Ampss. Its typical junction temperature is up to 175 deg C, and it has a forward voltage drop of 1.2 V @ 20 V. It is also capable of operating in temperatures ranging from -40 to 125 degrees Celsius. The diode also has a peak reverse current of 5mA and a peak reverse recovery time of 8ns.The UG8DT-E3/45 is a fast recovery diode, meaning that it is capable of recovering quickly from the voltage breakdown that occurs during diode switching. This feature reduces the amount of energy used during diode switching and also improves efficiency.The working principle of the UG8DT-E3/45 is based on the PN Junction. The diode consists of a P-type and N-type semiconductor material, which are separated by a thin barrier. When current passes through the diode, the P-type material is pushed away from the N-type material, creating a low resistance path.When the diode is forward biased, the PN Junction allows current to flow through it relatively easily. However, when the diode is in reverse bias, the PN Junction becomes very resistant and current cannot pass through it. This is what allows for efficient conversion of AC to DC.The UG8DT-E3/45 is a reliable and efficient rectifier diode. It is suitable for a wide variety of applications from power supplies to automotive electronics. Its fast recovery feature helps to reduce energy consumption and improve efficiency. It also has a wide operating temperature range and can work in temperatures ranging from -40 to 175 degrees Celsius.The specific data is subject to PDF, and the above content is for reference
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