UG8JT-E3/45 Allicdata Electronics
Allicdata Part #:

UG8JT-E3/45-ND

Manufacturer Part#:

UG8JT-E3/45

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 600V 8A TO220AC
More Detail: Diode Standard 600V 8A Through Hole TO-220AC
DataSheet: UG8JT-E3/45 datasheetUG8JT-E3/45 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 8A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

UG8JT-E3/45 is a single rectifier diode designed for a variety of uses. It is produced by many leading industry manufacturers such as Infineon, ON Semiconductor, Socomec, and Vishay. The UG8JT-E3/45 has a forward voltage drop of 2.5 V and a maximum DC reverse current of 1.2 A. Its unique construction makes it an attractive choice for a variety of applications.

Application Field

UG8JT-E3/45 is typically used in high current rectification applications such as power supplies, DC to DC converters, and solar energy systems. The UG8JT-E3/45 is also utilized in military and aerospace applications for its reliability and performance. It is most commonly used in computer circuits where its fast switching and low drop characteristics make it a favorable choice for mobile, laptop, and desktop applications.

In automotive applications, the UG8JT-E3/45 is highly beneficial because of its low reverse breakdown voltage. This makes it an ideal choice for use in switch circuits and LED circuit designs. Additionally, UG8JT-E3/45 has a high surge current rating and low forward voltage drop, making it an ideal choice for use in high-current load applications.

Working Principle

When no voltage is applied, the UG8JT-E3/45 diode behaves like an open circuit. This means that no current can flow through the diode. When a voltage is applied across the diode however, charges begin to accumulate around the junction of the diode. This is known as the rectification effect. In essence, the UG8JT-E3/45 rectifies voltage applied to it, allowing for the controlled flow of current.

When current flows by the anode, it is pulled towards the cathode and the voltage between them drops. This is known as the forward voltage drop. In the reverse direction, current will not flow unless the voltage between the anode and the cathode exceeds the device\'s breakdown voltage. When this occurs, the current flows freely in the reverse direction.

When a surge of current passes through the UG8JT-E3/45 diode, the device can handle up to 1.2 A of current without failing. This high current surge ability makes the UG8JT-E3/45 an ideal choice for many high current applications.

Conclusion

UG8JT-E3/45 is a single rectifier diode designed for a variety of uses. It is commonly used in power supplies, DC to DC converters, and solar energy systems, as well as military and aerospace applications. The UG8JT-E3/45 has a forward voltage drop of 2.5 V and a maximum DC reverse current of 1.2 A. It also has a low breakdown voltage and a high surge current rating, making it an ideal choice for many high current applications. In conclusion, UG8JT-E3/45 is an effective and reliable device for many power applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "UG8J" Included word is 6
Part Number Manufacturer Price Quantity Description
UG8J C0G Taiwan Semic... 0.68 $ 990 DIODE GEN PURP 600V 8A TO...
UG8JHC0G Taiwan Semic... 0.25 $ 1000 DIODE GEN PURP 600V 8A TO...
UG8JT-E3/45 Vishay Semic... -- 1000 DIODE GEN PURP 600V 8A TO...
UG8JTHE3/45 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 600V 8A TO...
UG8JCT-E3/45 Vishay Semic... 0.61 $ 1000 DIODE ARRAY GP 600V 4A TO...
UG8JCTHE3/45 Vishay Semic... 0.0 $ 1000 DIODE ARRAY GP 600V 4A TO...
Latest Products
IDW30E65D1

Diodes - General Purpose, Power, Switchi...

IDW30E65D1 Allicdata Electronics
PMEG4005AEA/M5X

DIODE SCHOTTKY 40V 500MA SC76Diode Schot...

PMEG4005AEA/M5X Allicdata Electronics
RGP10J-057M3/54

DIODE GEN PURPOSE DO-204ALDiode

RGP10J-057M3/54 Allicdata Electronics
1N4004-N-2-2-BP

DIODE GEN PURP 400V 1A DO41Diode Standar...

1N4004-N-2-2-BP Allicdata Electronics
CPD76X-1N5817-CT

DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...

CPD76X-1N5817-CT Allicdata Electronics
JANTXV1N6662US

DIODE GEN PURP 400V 500MA D5ADiode Stand...

JANTXV1N6662US Allicdata Electronics