UH1CHE3/61T Allicdata Electronics
Allicdata Part #:

UH1CHE3/61T-ND

Manufacturer Part#:

UH1CHE3/61T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 150V 1A DO214AC
More Detail: Diode Standard 150V 1A Surface Mount DO-214AC (SMA...
DataSheet: UH1CHE3/61T datasheetUH1CHE3/61T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1µA @ 150V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: UH1C
Description

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Diodes play an important role in electronic circuits, providing various features. One of the widely used diodes is the UH1CHE3/61T, which is a fast-recovery rectifier diode. This article explores the application field and working principles of the UH1CHE3/61T diode, with a focus on its features and advantages.

Application Field

The UH1CHE3/61T diode is designed for use in high power switch H-bridge applications. It is typically used to control large current such as motor drivers and power supplies, or any application where a fast response time is required. The UH1CHE3/61T can be used in both AC and DC circuits.

Working Principle

The working principle of the UH1CHE3/61T diode is based on the PN junction. It consists of two regions – an N-type region (negative polarity) and a P-type region (positive polarity). When a forward voltage is applied to the diode, the N-type region acts as an anode and the P-type region acts as a cathode. An electron-hole pair is then formed, allowing current to flow through the diode.When the voltage is reversed, the junction becomes reverse-biased and the current stops, thus blocking any current from flowing in the opposite direction. The UH1CHE3/61T diode utilizes a “fast-recovery” technology which allows it to switch off quickly. This makes it more suitable for applications where high speed is required.

Features and Advantages

The UH1CHE3/61T diode has a number of features which make it an ideal choice for high power applications. It has a high forward current (average 1500mA) and a peak repetitive reverse voltage (VRRM) up to 100V. Its fast recovery time allows for a more efficient use of the power available in the circuit and ensures that the circuit is mechanically stable.The UH1CHE3/61T diode is also extremely reliable with a low failure rate. It has a long shelf life and a low thermal impedance, making it suitable for use in a variety of environments. Finally, the UH1CHE3/61T is also competitively priced, making it a great value for money.

In conclusion, the UH1CHE3/61T diode is a fast-recovery rectifier diode designed for use in high power switch H-bridge applications. Its high forward current, peak reverse voltage and fast recovery time make it an ideal choice for applications where high speed is required. Furthermore, the UH1CHE3/61T is also reliable, has a long shelf life and is competitively priced.

The specific data is subject to PDF, and the above content is for reference

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