Allicdata Part #: | UH1DHE3_A/H-ND |
Manufacturer Part#: |
UH1DHE3_A/H |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 1A DO214AC |
More Detail: | Diode Standard 200V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | UH1DHE3_A/H Datasheet/PDF |
Quantity: | 1000 |
1800 +: | $ 0.09049 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.05V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 1µA @ 200V |
Capacitance @ Vr, F: | 17pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 175°C |
Base Part Number: | UH1D |
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Diodes are electronic components that control the direction and magnitude of current flow in an electrical circuit. Rectifier diodes are one kind of diode, specifically designed for the purpose of rectifying alternating current (AC) to direct current (DC). Rectifier diodes are used to build simple and efficient power rectifiers that can handle high currents and low voltages. The UH1DHE3-A/H rectifier diode is a single diode in a very versatile package, designed and optimized for rectification applications.
The UH1DHE3-A/H rectifier diode is a versatile package containing one diode in a flat epoxy resin package. It features very low forward voltage drop, low reverse current leakage, and tight parameters over temperature. It can operate at temperatures of up to 100°C, and is ideal for power rectification applications, including motor, telephone and broadcast equipment rectification, as well as for power supply applications. The diode is available in three different packages for different applications;SOD-323,SOD-523 and SOD-723.
The UH1DHE3-A/H rectifier diode works on the principle of majority carrier control. In this device, a single layer of doped semiconductor forms the P-N junction. This junction is created by introducing an impurity on one side of the P-N junction. When a voltage is applied to the diode, the majority carriers of both the N-type and P-type semiconductors move toward each other and cause conduction. This process is known as forward biasing. Once the diode is forward biased, the diode behaves like a closed switch and current begins to flow.
When the voltage across the diode is reversed, the current flow goes to zero. This is known as reverse biasing and is due to the fact that there are no majority carriers in the N-type or P-type semiconductor. In this reverse biased mode, the diode behaves like an open switch and the current flow is stopped. This is the principle of the UH1DHE3-A/H rectifier diode, and it is the key to its exceptional performance in power rectification.
The UH1DHE3-A/H rectifier diode has many advantages over traditional silicon diodes. It is highly efficient, with low forward voltage drops and low reverse current leakage. This enables the diode to handle higher current and lower voltage levels. It has a very wide operating temperature range, from -55°C to 100°C, making it suitable for applications in extreme environments. It is also available in three different package sizes, making it the perfect choice for many different power rectification applications.
The UH1DHE3-A/H rectifier diode is an excellent choice for power rectification applications. It offers great performance, with low forward voltage drops and low reverse current leakage, and is available in three different package sizes for added flexibility. The wide operating temperature range makes it suitable for use in extreme environments. It is the perfect choice for many different power rectification tasks.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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UH1DHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
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