UH3D-E3/9AT

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A Uni-hump 3D-E3/9AT is an advanced ultra-thin single rectifier diode with a rugged design. It is designed to meet the high power density needs of today\'s high current applications. The 3D-E3/9AT has a special shape which enables efficient and stable performance while offering a wide range of features. This article will explore the 3D-E3/9AT\'s application field and working principle.

Application Field

The 3D-E3/9AT is primarily used in constant current, high current power distribution applications in the electronic industry. It is a key component for those who require reliable, high power output for their electronic products. Its high heat dissipation and surge capability make it ideal for use in applications such as LED lighting, automotive lighting, monitoring systems, renewable energy, industrial and manufacturing, and other power distribution and electronics applications.

The 3D-E3/9AT provides several advantages over other rectifier diodes. It is capable of handling up to 4A of current and has a wide operating temperature range of -40°C to +150°C. This makes it suitable for high temperature and harsh environments such as automotive and marine applications. The unique shape and highly efficient construction combined with its low voltage drop make it perfect for power controlling in situations where space is at a premium.

It is also ideal for high frequency, power supply and other power electronics related applications. With its low forward voltage drop and the ability to withstand higher reverse voltages, it is suitable for use in power conversion and protection circuits. Moreover, its ultra-thin construction and lightweight design make it a preferred choice for many electronic systems and devices.

Working Principle

The 3D-E3/9AT consists of four p-type and four n-type main diffusion diodes which are connected in parallel. This allows the 3D-E3/9AT to switch on quickly and efficiently, while keeping the reverse leakage current to a minimum. When reverse bias is applied, the 4P-type main diffusion diodes conduct electricity across the junction. This is followed by the 4N-type main diffusion diodes which prevent any further current leakage.

In order to further reduce reverse leakage current, a guard ring is also included in the design. It consists of an outer ring of high-resolution p-type semiconductor material, which is connected to the ground. This ensures that the device does not conduct any electricity when reverse biased.

When forward bias is applied, the voltage drop of the 4P-type main diffusion diodes is lower than 0.4V, creating an ultra-low forward voltage drop. This ensures that the 3D-E3/9AT can achieve high efficiency and reduce power losses. Additionally, the device has a wide operating temperature range, making it suitable for use in harsh environments.

The 3D-E3/9AT delivers superior performance and durability, making it ideal for power distribution, protection and high frequency applications. In addition, its compact form factor makes it easy to install in tight spaces. So, whether you\'re looking for temperature protection, reliable power distribution or a lightweight power controller, the 3D-E3/9AT is an ideal choice.

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