Allicdata Part #: | UHF5JT-E3/4W-ND |
Manufacturer Part#: |
UHF5JT-E3/4W |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 8A ITO220AC |
More Detail: | Diode Standard 600V 8A Through Hole ITO-220AC |
DataSheet: | UHF5JT-E3/4W Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Last Time Buy |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 3V @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 40ns |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 Full Pack, Isolated Tab |
Supplier Device Package: | ITO-220AC |
Operating Temperature - Junction: | -55°C ~ 175°C |
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A UHF5JT-E3/4W is a single-phase silicon-controlled rectifier designed for high frequency applications. The device is designed to have low voltage and low power requirements, making it suitable for use in a variety of applications. The UHF5JT-E3/4W is a typical SiC rectifier, which utilizes SiC (silicon carbide) technology to provide outstanding performance and reliability.
UHF5JT-E3/4W Application Fields:
The UHF5JT-E3/4W is primarily used in power switching applications, such as various types of motors, blowers, compressors, pumps and fans. In addition, it is commonly used in power supply and appliance control systems, such as solar and wind power, lighting and home appliances. Other applications include audio and home theater equipment, industrial controllers, medical and telecommunication systems, television and computer circuits.
Working Principle of UHF5JT-E3/4W:
The UHF5JT-E3/4W works by allowing a low voltage DC current to flow through its PNP structure, which consists of three layers: the collector, the gate and the source. This current causes a voltage drop across the anode of the device, which triggers a reverse biasing of the NPN junction. When the cathode current, known as the gate current, reaches a specific level, the reverse biasing causes the NPN junction to become forward biased. This action turns on the device and allows current to flow through the source and drain.
When the device is turned on, the current flow is controlled by the gate voltage and the base-emitter voltage. The gate voltage determines the delay time, or the amount of time required for the reverse biasing process to complete. The base-emitter voltage determines the forward biasing current, or the amount of current that allows the device to remain on.
The UHF5JT-E3/4W also features an inrush current limitation, which prevents it from drawing an excessive current from the power supply when it is initially turned on. This helps reduce the power consumption and ensures that the device does not overload the circuit.
Finally, the UHF5JT-E3/4W has an inherently low on-state voltage drop, which helps reduce energy losses and improve the system efficiency.
Conclusion:
The UHF5JT-E3/4W is a single-phase SiC rectifier designed for high frequency applications. Its low voltage and low power requirements make it suitable for a variety of applications, including power switching and power supply and appliance control systems. The working principle of the device involves the use of a PNP structure, reverse biasing and inrush current limitation. It also has an inherently low on-state voltage drop, which helps improve system efficiency.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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UHF5JT-E3/4W | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 8A IT... |
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