UMIL10

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	30V
Frequency - Transition:	100MHz ~ 400MHz
Noise Figure (dB Typ @ f):	--
Gain:	10dB
Power - Max:	28W
DC Current Gain (hFE) (Min) @ Ic, Vce:	10 @ 200mA, 5V
Current - Collector (Ic) (Max):	1.5A
Operating Temperature:	200°C (TJ)
Mounting Type:	Chassis, Stud Mount
Package / Case:	55FT
Supplier Device Package:	55FT

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Introduction

UMIL10 is a type of bipolar junction transistor (BJT) designed specifically for use in radio frequency (RF) applications. These devices are ideal for applications that require high levels of performance, such as communication systems and radio receivers. They are also used in microwave ovens and cordless telephones. The UMIL10 has excellent RF characteristics, such as low noise, low distortion, and high gain.

Physical Characteristics

The UMIL10 is a three-terminal device that is contained in an epoxy package. The pins on the package are arranged in a triangle and are labeled P, B, and E. P is the collector, B is the base, and E is the emitter. The device has a maximum power dissipation rating of 0.5 watt and is rated for operation up to 175 degrees Celsius. It has a 1/4 wave length wire lead for easy connection, and an insulation foil shield for enhanced EMI protection.

Working Principle

A UMIL10 bipolar junction transistor (BJT) is a type of transistor that uses an electric current to control current flow. In a BJT, electrons flow from the base to the collector. The current from the collector is then amplified and used to control the current from the emitter.The basic working principle of a UMIL10 BJT is that a voltage signal is applied to the base, which creates an electric field. This electric field then attracts electrons from the emitter to the base, thus controlling the current flow between the collector and emitter. As the voltage signal increases, the electric field increases, which allows more current to flow between the collector and emitter. This increase in current is known as amplification.

Specifications

The UMIL10 has several important specifications that make it an ideal choice for radio frequency applications. It has a maximum operating frequency of 400MHz and a breakdown voltage of 60V. The maximum power dissipation is 0.5 watt and the typical gain at 25MHz is 75dB. The junction temperature range is -55°C to +175°C and the storage temperature range is -65°C to +150°C.

Conclusion

The UMIL10 is a type of bipolar junction transistor (BJT) designed specifically for use in radio frequency (RF) applications. The device has excellent RF characteristics, such as low noise, low distortion, and high gain. The main specifications to consider when using the UMIL10 are its maximum operating frequency, breakdown voltage, maximum power dissipation, and gain. Due to the combination of these excellent performance characteristics and its low cost, the UMIL10 is an ideal choice for a wide range of radio frequency applications.

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