Allicdata Part #: | UMIL80-ND |
Manufacturer Part#: |
UMIL80 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS RF BIPO 220W 12A 55HU-2 |
More Detail: | RF Transistor NPN 31V 12A 200MHz ~ 500MHz 220W Cha... |
DataSheet: | UMIL80 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 31V |
Frequency - Transition: | 200MHz ~ 500MHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 9dB ~ 9.5dB |
Power - Max: | 220W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 1A, 5V |
Current - Collector (Ic) (Max): | 12A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | 55HV |
Supplier Device Package: | 55HV |
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UMIL80 application field and working principle
The UMIL80 is a type of bipolar junction transistor (BJT), designed for use as an RF amplifier. It is a medium power, high frequency transistor, which can be used for radio frequency switching and amplification. The large size of the transistor allows for increased power in the RF ranges compared to traditional small signal transistors.
The main application for the UMIL80 is in the field of radio frequency (RF) amplification and switching. The transistor is versatile and can be used for a variety of purposes including high frequency oscillators, HF amplifiers, modulators, receivers, transmitters, and wideband amplifiers. The UMIL80 has been used in various RF applications such as cell phone jammers, satellite communication transceivers, military radios, and microwave ovens.
The working principle of the UMIL80 transistor can be described as follows. It is a three-terminal device that is based around a PN junction. When an input voltage is applied to the base terminal, current will flow through the emitter-base junction, which in turn allows the collector to receive a voltage. The output voltage is thus proportional to the amount of current that flows through the BJT.
The collector has very high impedance, which allows it to extract the maximum power from the input signal without affecting the input voltage level. The gain of the UMIL80 transistor is typically between 40 and 80 dB, depending on its bias current. This makes it ideal for use in RF applications which require a large dynamic range and gain.
In order to take full advantage of the UMIL80, proper biasing is essential. The device should be biased at its optimal voltage, known as the flat-region, to ensure maximum performance and fidelity. Proper biasing is typically achieved in two steps. First, a voltage divider network is used to set the base voltage. Then, a bypass capacitor is used to apply a DC bias current, which sets the threshold of the collector current and thus the transistor\'s gain.
The UMIL80 is a popular transistor, due to its high power, versatility, and dynamic range. It has a wide range of applications in RF applications, and is particularly useful in radio frequency amplifiers, receivers, and modulators. With proper biasing and an appropriate circuit design, the performance of the device can be maximized.
The specific data is subject to PDF, and the above content is for reference
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