UMN10NTR Discrete Semiconductor Products |
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Allicdata Part #: | UMN10NTR-ND |
Manufacturer Part#: |
UMN10NTR |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ARRAY GP 80V 100MA UMD6 |
More Detail: | Diode Array 3 Independent Standard 80V 100mA Surfa... |
DataSheet: | UMN10NTR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.09740 |
6000 +: | $ 0.09112 |
15000 +: | $ 0.08484 |
30000 +: | $ 0.08379 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Configuration: | 3 Independent |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 80V |
Current - Average Rectified (Io) (per Diode): | 100mA |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 100mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 100nA @ 70V |
Operating Temperature - Junction: | 150°C (Max) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | UMD6 |
Base Part Number: | MN10 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Infineon Technologies’s UMN10NTR is a progressive, cost-effective four-phase, gate turn-off thyristor array designed for moderate to high power applications. The device has a nominal blocking voltage of 650 V and peak current ratings of up to 190 A depending upon tapping points, which allows the UMN10NTR to be used in a wide range of applications. As such, the UMN10NTR provides efficient rectification and switching in power conversion systems such as those found in motor drives, welding power supplies, traction systems and wind turbines.
The UMN10NTR utilizes a four-phase design, which allows it to operate at higher frequencies and higher efficiencies than competing thyristors. This provides superior performance in terms of power density and switching times, allowing the UMN10NTR to be used in many applications where space and time constraints are a key focus. The device is also designed to provide improved reliability over traditional thyristor solutions, including fewer voids, extended operating life and robust handling of operating shocks or vibration that are found in many critical industrial applications.
The working principle of the UMN10NTR is based on the turn-off blocking operation of a thyristor. The device is composed of four parallel-connected thyristors, connected in series with a gate driver and gate activation control. The gate turn-off thyristors (GTOs) are turned on and off by the gate driver and then, they remain latched in the activated state until the turn off command is applied.
When the gate current is at the known threshold, the GTO thyristor begins to conduct. This then allows current to flow through the device until the turn off command is applied. To turn off the device, the reverse bias voltage opens the GTO thyristor by preventing current from flowing. When this is done, the GTO thyristor is switched off and the device returns to the blocking state.
The UMN10NTR is designed to operate at a nominal blocking voltage of 650 V and peak current ratings of up to 190 A depending upon tapping points. The device is suitable for high power applications such as motor drives, welding power supplies, traction systems, and wind turbines due to its efficiency and fast switching operations. In addition, the device is designed to be robust and reliable, providing improved reliability over traditional solutions which is key for industrial applications.
The specific data is subject to PDF, and the above content is for reference
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