UMX3NTR Discrete Semiconductor Products |
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Allicdata Part #: | UMX3NTRTR-ND |
Manufacturer Part#: |
UMX3NTR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS 2NPN 50V 0.15A 6UMT |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 15... |
DataSheet: | UMX3NTR Datasheet/PDF |
Quantity: | 9000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 6V |
Power - Max: | 150mW |
Frequency - Transition: | 180MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | UMT6 |
Base Part Number: | *MX3 |
Description
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UMX3NTR Application Field and Working PrincipleThe UMX3NTR is a semiconductor component that has been developed to meet the needs of telecommunications and broadband applications. It is an array of bipolar transistors (BJT) grouped into a multi-layer package with a single common emitter and shared base/collector combination. The UMX3NTR offers the highest performance among its class. It features a wide range of operating conditions with low power dissipation, excellent linearity and low noise. It is well-suited for high speed applications such as switching, high power amplification, voltage regulator or gain control.The UMX3NTR utilizes a multi-layer package to provide an excellent electrical isolation from other parts of the circuit and also provides a compact design and high reliability. The package consists of a heavy metal base such as copper, as well as a thin dielectric layer to provide isolation between the transistor junctions and the package terminals.The UMX3NTR is a three-stage bipolar NPN transistor with a complementary PNP design, each stage having its own base, collector and emitter. The three stages are connected in a cascode arrangement so that the current flow from the collector to the emitter is controlled by the base terminals of the three stages in series. In order to ensure the highest level of performance and reliability, the transistors are closely matched. The UMX3NTR features a multi-terminal control pin with switching diodes to ensure the fastest switching speeds.The UMX3NTR has a wide range of features that make it ideal for a variety of applications. It features excellent thermal conductivity, low power dissipation and excellent linearity. Additionally, it includes a wide range of operating conditions including high frequency, high current and high voltage operation. The UMX3NTR also features low intrinsic capacitance which makes it suitable for switching applications. The three-stage cascode configuration allows for high gain, low noise and high speed operation.The UMX3NTR\'s working principle is very simple. When a voltage is applied to the base of the first stage it induces a current in the collector and this current is then amplified by the transistor\'s series connection. The amplified current is then applied to the base of the second stage, resulting in the same current being amplified further. The process repeats in the third stage. This results in a high gain and low noise operation.Overall, the UMX3NTR is a versatile and high-performance transistor array with excellent features that make it suitable for a wide range of applications. The low power dissipation, high gain and low noise operation, as well as its excellent thermal conductivity and wide operating range, make the UMX3NTR an ideal solution for telecommunications, broadband and other high-speed applications.
The specific data is subject to PDF, and the above content is for reference
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