UMZ18NT106 Discrete Semiconductor Products |
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Allicdata Part #: | UMZ18NT106TR-ND |
Manufacturer Part#: |
UMZ18NT106 |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ZENER ARRAY 18V 200MW UMD3 |
More Detail: | Zener Diode Array 1 Pair Common Anode 18V 200mW U... |
DataSheet: | UMZ18NT106 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
3000 +: | $ 0.06237 |
6000 +: | $ 0.05891 |
15000 +: | $ 0.05371 |
30000 +: | $ 0.05024 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Configuration: | 1 Pair Common Anode |
Voltage - Zener (Nom) (Vz): | 18V |
Tolerance: | -- |
Power - Max: | 200mW |
Current - Reverse Leakage @ Vr: | 100nA @ 13V |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | UMD3 |
Base Part Number: | UMZ18 |
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The UMZ18NT106 is part of Diodes Incorporated\'s range of Arrays. It is a Silicon Channel ESD Array designed for protection of high speed signal ports from Electrostatic Discharge (ESD). It is designed to provide protection for signal ports that may come in contact with human users, including those that require the higher ESD performance levels of IEC61000-4-2 Level 4 and the automotive ESD levels (ISO 10605 and ISO 16750-2). The array provides a low capacitance solution with only 0.3 pF typical, to allow maximum signal integrity.
The UMZ18NT106 is a Uni-polar device with an 18 V breakdown voltage. It has a very low leakage current, (< 0.1 uA) and low dynamic resistance, (< 50 mO). The integrated monolithic design includes an ESD protection diode, 2 schottky diodes, 2 MOSFETs and ESD protection circuitry, allowing for a compact and cost effective solution for ESD protection of high speed ports.
The UMZ18NT106 is designed to provide reliable ESD protection for a variety of digital and mixed signal devices, from discrete level signals up to high speed data buses. The device is designed to protect low voltage devices with a maximum operating voltage of 5.5 V, from the higher ESD levels of up to 8 kV contact discharge and 15 kV air discharge.
The working principle of the UMZ18NT106 is to absorb the ESD pulses and prevent them from reaching the protected signal port. When an ESD pulse is applied to the protected port, the trigger electrode of the diode is connected to ground, which activates the integrated ESD circuitry. The current then passes through the trigger electrode and the integrated MOSFET and is redirected by the ESD protection circuitry, in order to protect the protected port. The device also includes a low capacitance discharge network in order to dissipate the energy of the ESD pulse quickly and effectively.
The UMZ18NT106 is ideal for a variety of applications including consumer electronics, mobile phones, tablets, computers, automotive, audio and video equipment, gaming consoles, digital camcorders and peripherals, as well as many other devices which require high levels of ESD protection.
In summary, the UMZ18NT106 is a cost effective, low voltage, integrated ESD protection array designed for protection of high speed signal ports from Electrostatic Discharge. It offers a low capacitance solution with only 0.3 pF typical, to allow maximum signal integrity and is ideal for a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
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