Allicdata Part #: | UMZ1NT1OS-ND |
Manufacturer Part#: |
UMZ1NT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN/PNP 50V 0.2A SOT363 |
More Detail: | Bipolar (BJT) Transistor Array NPN, PNP 50V 200mA ... |
DataSheet: | UMZ1NT1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN, PNP |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 2µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 6V |
Power - Max: | 250mW |
Frequency - Transition: | 114MHz, 142MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Base Part Number: | UMZ1N |
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This article aims to explain the application field and working principle of UMZ1NT1 — a transistors bipolar junction array. Firstly, this device can be used in many circuitry designs, such as oscillators, logic circuits, audio amplifiers, or power amplifiers. Secondly, this device can also be utilized to switch voltages on multiple channels or even provide a low current. Also, it provides a wide range of applications, making it suitable for high temperatures, low voltage and medium frequency applications.
The UMZ1NT1 array consists of two transistors - a PNP-type and an NPN-type pair. This pair of transistors is connected in such a way that their collector current is amplified, giving the user a higher output current with lower input power. This is known as the current gain of the device. When an electrical signal is applied to the base of the transistor, electrons flow into the emitter and then out into the collector. This result in a current gain. The ratio between the amount of current entering the emitter and the amount of current leaving the collector is known as the current gain.
Beside that, the UMZ1NT1 array can also be used as a switching element. This is due to the fact that the transistors within the array can be used to switch voltages on multiple channels. To do this, the current gain of the transistors is adjusted so that it is greater than one. This means that the output current will be greater than the input current. As a result, when a voltage is applied to the base of the transistors, the voltage will be switched on across the collector and emitter of the transistors. This results in a higher voltage output than the voltage input.
The UMZ1NT1 array can also be used for low current switching. This is because the input current required for the device to operate is low, meaning the device can be used to switch low currents. The device can be used to switch low frequency signals as well as medium frequency signals.
Finally, the UMZ1NT1 array can also be used in high temperature applications. This is because the device is able to operate in high temperatures due to its special thermal properties. The device is able to withstand high temperatures up to 400 Celsius, making it suitable for high temperature applications such as automotive or industrial applications.
To conclude, the UMZ1NT1 array is a versatile device with a wide range of applications. It can be used for high current switching, low current switching, oscillators, logic circuits, medium and high frequency applications, and even applications in high temperature conditions. The device consists of two transistors – a PNP-type and a NPN-type pair. The two transistors are connected in such a way that their collector current is amplified, giving the user a higher output current with lower input power. This device can also be used as a switching element due to the fact that its current gain can be adjusted.
The specific data is subject to PDF, and the above content is for reference
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