UMZ7NTR Allicdata Electronics

UMZ7NTR Discrete Semiconductor Products

Allicdata Part #:

UMZ7NTR-ND

Manufacturer Part#:

UMZ7NTR

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN/PNP 12V 0.5A 6UMT
More Detail: Bipolar (BJT) Transistor Array NPN, PNP 12V 500mA ...
DataSheet: UMZ7NTR datasheetUMZ7NTR Datasheet/PDF
Quantity: 3000
1 +: $ 0.08000
10 +: $ 0.07760
100 +: $ 0.07600
1000 +: $ 0.07440
10000 +: $ 0.07200
Stock 3000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Power - Max: 150mW
Frequency - Transition: 320MHz, 260MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6
Base Part Number: *MZ7
Description

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The UMZ7NTR is a type of technology used in bipolar junction transistors (BJT) arrays, one that offers a range of advantages when it comes to various applications. As its name implies, the technique consists of the combination of high voltage bipolar junction transistors, which allows the device to provide both high power and high speed, along with other benefits.The main advantage of this technology is its ability to offer exceptionally high input voltage capability. This makes the UMZ7NTR particularly attractive for use in applications that require setting high voltage without sacrificing speed or power. For instance, it is often used in power switching designs, as the device can provide low on-resistance while at the same time allowing a high voltage. It is also commonly used in automotive power converters because it can supply the higher voltages typically needed in these applications while remaining small and compact.When it comes to its working principle, the UMZ7NTR utilizes an arrangement of multiple BJT transistors that are connected in a certain manner. The specific way these transistors are connected, specifically their orientation and the type of packages that contain them, can vary depending on the application and engineering details, but in general, the device takes advantage of the current flow between the positive and negative terminals to perform the desired task.The main benefit of the device is its ability to provide high voltage in a very small package, making it suitable for applications where space is a major factor. In addition, it also offers a wide range of temperature capability, making it an ideal choice for applications that operate in hot or cold climates. The high voltage and wide temperature range combine to make the UMZ7NTR a suitable choice for numerous applications.In terms of reliability and cost-efficiency, the device is rated to handle high voltage surges and is resistant to damage due to electrostatic discharge, making it durable and dependable. Furthermore, it has low power consumption, making it suitable for applications that require high power yet need to operate in a low power environment. The low power consumption also means that the device is more cost-effective to manufacture.Overall, the UMZ7NTR offers a range of advantages, including high voltage capability, wide temperature range, high power capabilities, and low power consumption, making it suitable for a variety of applications. Its design allows it to be used in areas where other technologies do not offer the same benefits, or are not suitable due to its size or complexity, which makes it an innovative and reliable choice for new and existing technologies.

The specific data is subject to PDF, and the above content is for reference

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