UMZ8NTR Allicdata Electronics
Allicdata Part #:

UMZ8NTR-ND

Manufacturer Part#:

UMZ8NTR

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN/PNP 50V/12V UMT6
More Detail: Bipolar (BJT) Transistor Array NPN, PNP 50V, 12V 1...
DataSheet: UMZ8NTR datasheetUMZ8NTR Datasheet/PDF
Quantity: 1000
3000 +: $ 0.06192
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 150mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V / 270 @ 10mA, 2V
Power - Max: 150mW
Frequency - Transition: 180MHz, 260MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6
Description

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The UMZ8NTR is an integrated bipolar transistor array which is capable of providing high power amplification and switching in a relatively small and inexpensive package. It is composed of a single NPN array and is ideal for applications such as audio power amplifiers, power switching circuits and switching actuators.

The UMZ8NTR utilizes a three-terminal NPN bipolar transistor array with a single collector, base and emitter terminal. This configuration provides a compromise between speed and power, while allowing the device to operate at higher operating temperatures than other devices.The UMZ8NTR is capable of providing a significant collector current, as well as a large switching capability due to its well designed emitter structure. The emitter structure also ensures low noise performance which is important when using the device in audio applications.

The transistor array can be used in either switching or linear mode, depending on the application. The device can be configured in various ways to meet specific needs, such as parallel or totem-pole arrangements. The device supports both normally open (N/O) and normally closed (N/C) operation, as well as pulsed operation modes.

The main advantage of the UMZ8NTR is its small size and low cost. The device is well suited for applications where space and cost are primary concerns.The device has a wide range of operating temperature, from -60°C to +150°C and can operate in an ambient temperature range of -60°C to +85°C. The device also has low power losses, making it a suitable choice for applications where power efficiency is critical.

The working principle of a UMZ8NTR is relatively simple. When the base terminal is forward biased above the cutoff voltage, current will flow between the collector and emitter terminal, switch is activated and the device is said to be in its "on" state. Conversely, when the base terminal is reverse biased, current does not flow and the device is in its "off" state. When used in linear mode, the device operates in a saturated or partially saturated state, depending on the application. In this mode, the device is said to be working in its region of operation.

In summary, the UMZ8NTR is an integrated bipolar transistor array that is capable of providing high power amplification and switching in a relatively small and cost-effective package. The device is suitable for applications such as audio power amplifiers, power switching circuits and switching actuators and is well suited for applications where space and cost are primary concerns. The device can also be used in either switching or linear mode and is capable of providing a significant collector current and a large switching capability due to its well designed emitter structure. The working principle of the device is relatively simple and it is capable of operating at a wide range of temperatures.

The specific data is subject to PDF, and the above content is for reference

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