UPP9401E3/TR7 Discrete Semiconductor Products

Series:	POWERMITE®
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	PIN - Single
Voltage - Peak Reverse (Max):	50V
Capacitance @ Vr, F:	1pF @ 0V, 100MHz
Resistance @ If, F:	1 Ohm @ 50mA, 100MHz
Power Dissipation (Max):	2.5W
Operating Temperature:	-55°C ~ 150°C (TJ)
Package / Case:	DO-216AA
Supplier Device Package:	DO-216
Base Part Number:	UPP9401

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

UPP9401E3/TR7 is a type of RF diode, which is widely used in a variety of applications due to its flexibility and robust performance. This diode is designed with a negative gate and can be used in either pulsed or continuous operation. The device has a wide working frequency range and can operate in either AC or DC voltage regimes. The device is also temperature sensitive and can be used in temperatures as low as -40°C.In terms of application fields, UPP9401E3/TR7 is typically used in RF detectors, RF switches, RF amplifiers, RF Synthesizers, and RF sensors. Moreover, the device can also be found in applications such as mobile base stations and various other telecommunications systems. In each of these applications, this diode is used as a component that allows for on/off switching or modulation of RF signals. Regarding the working principle of this diode, it is based on the functioning of a reverse-bias Schottky Barrier Diode (SBD) with a negative gate. In this operating mode, the device is commonly referred to as a "Schottky FET". It works by applying a bias voltage to the gate of the diode which then causes the SBD to act as a rectifier, blocking any current flow when the bias voltage is in a reverse direction. This blocking then allows for ‘on/off’ switching, which is then used to control the flow of the RF signal, making it possible to modulate the signal.In addition, UPP9401E3/TR7 is also capable of displaying good dynamic performance with low Insertion Loss (IL), isolation and Return Loss (RL). This is essential for switching and modulation applications as a large IL and RL causes high signal losses, whereas dynamic performance also determines the accuracy of the application. The device does this by operating with a high impedance at the gate, meaning that the device can rapidly respond to changes in RF signals. When considering the process of implementing the device into applications, it is important to take into account its environmental requirements and various other specifications. This is because, in order to function efficiently, the device must be connected and setup correctly. This can include ensuring that the bias voltage applied to the gate is within the specified range, that the package is correctly soldered, and that the power supply has adequate current. To conclude, UPP9401E3/TR7 is a type of RF diode, which is widely used in a variety of telecommunications and other applications due to its flexibility and robust performance. This diode is operated as a Schottky FET, using a negative gate bias, and has a wide working frequency range. It is also temperature sensitive, and can provide good dynamic performance with low Insertion Loss, isolation and Return Loss. The device must be correctly connected and set up in order to function efficiently, but if this is done correctly, it can provide excellent standards of performance in a range of applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description