UPS835L/TR13 Discrete Semiconductor Products

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UPS835L/TR13 is a single phase silicon rectifier diode intended for general use, especially in applications that require high temperature performance and high surge capability. It is manufactured to adhere to high temperature, high power, and high frequency operating characteristics.

The UPS835L/TR13 is designed to rectify medium to high-speed electrical signals. It provides extremely low leakage current and fast reverse recovery time, both of which make it ideal for high frequency and/or high power applications.

UPS835L/TR13 utilizes a single phase power rectifier structure composed of a four-layer structure. It has a high reverse voltage rating, wide operating temperature range, and relatively low forward voltage drop. Furthermore, its design makes it self-extinguishing and its construction makes it suitable for use in high temperature environments.

The operating principle behind the UPS835L/TR13 is relatively simple. When a forward bias is applied to the anode side and the cathode side of the diode, the voltage applied to the anode side is greater than the voltage on the cathode side. As a result, the diode allows current to pass through in only one direction. When the polarities are reversed, the anode side becomes negative and the diode fails to conduct current.

Because of its relatively high forward voltage drop and slight temperature sensitivity, the UPS835L/TR13 is often used in high frequency and/or high power applications such as power factor correction, active harmonic filtering, converters, phase control and rectifier bridges. It is also ideal for use in power switching circuits, flyback converters, and phase shifted full-wave rectification circuits.

In conclusion, the UPS835L/TR13 is a single phase silicon rectifier diode that is designed for use in applications requiring high temperature performance and high surge capability. It offers low leakage current and fast reverse recovery time, making it suitable for high frequency and/or high power applications. The device utilizes a four-layer structure and is suitable for use in high temperature environments.

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