US1NWF-7 Discrete Semiconductor Products |
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Allicdata Part #: | US1NWF-7DITR-ND |
Manufacturer Part#: |
US1NWF-7 |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 1.2KV 1A SOD123F |
More Detail: | Diode Standard 1200V 1A Surface Mount SOD-123F |
DataSheet: | US1NWF-7 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.09696 |
6000 +: | $ 0.09109 |
15000 +: | $ 0.08521 |
30000 +: | $ 0.07816 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 500mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 80ns |
Current - Reverse Leakage @ Vr: | 5µA @ 1200V |
Capacitance @ Vr, F: | 5pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123F |
Supplier Device Package: | SOD-123F |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes are an important type of semiconductor device found in a variety of electronics. The US1NWF-7 diode is a single rectifier diode with a wide range of applications in various types of equipment. This article will discuss the application field and working principle of the US1NWF-7.
The US1NWF-7 is a silicon matched recifier diode. It is a non-polar device, meaning it can be used with either polarity. The US1NWF-7 diode is typically used for the rectification of high frequency pulses, such as for noise reduction and power factor correction. It is also commonly used in switching power supplies, radio-frequency circuits, and in AC-DC converters.
The maximum forward current (IF(max)) for the US1NWF-7 is 3.2A, which is sufficient for most applications. The maximum reverse voltage rating of the diode is 100V, making it suitable for higher voltage applications. The diode has a forward voltage drop (VF) of 1.2V, ensuring that the correct voltage will be supplied to the load.
In terms of its working principle, the US1NWF-7 is designed to conduct current only in one direction. This is achieved through the use of a P-type and an N-type semiconductor material, which are arranged in a junction. When a positive voltage is applied to the diode, electrons are pulled from the P-type material and across the junction. This creates an electric field, which prevents the electrons from returning to the P-type material. In other words, the current is only allowed to flow from the P-type material to the N-type material.
The electric field created by the US1NWF-7 is one of its key advantages. This allows the diode to conduct current more efficiently than standard rectifiers, which can experience a certain amount of “loss” due to inherent resistance in their design. This improved efficiency makes the US1NWF-7 ideal for applications where power dissipation and heat generation must be kept to a minimum.
Another advantage of the US1NWF-7 is its low capacitance. At a reverse voltage of 10V, the capacitance of the diode is only 2.2pF, which is significantly lower than comparable rectifier diodes. This is an important factor for many radio-frequency applications, as it helps reduce interference.
In conclusion, the US1NWF-7 is a single rectifier diode that has a wide range of applications. It has a maximum forward current of 3.2A and a reverse voltage rating of 100V, making it suitable for higher voltage applications. The diode has a low capacitance and a high electric field, which enables it to provide superior efficiency and noise reduction. All these characteristics make the US1NWF-7 an ideal choice for many electronics applications.
The specific data is subject to PDF, and the above content is for reference
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