USB50815E3/TR13 Allicdata Electronics

USB50815E3/TR13 Circuit Protection

Allicdata Part #:

USB50815E3/TR13-ND

Manufacturer Part#:

USB50815E3/TR13

Price: $ 0.63
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 15V 32V 8SO
More Detail: N/A
DataSheet: USB50815E3/TR13 datasheetUSB50815E3/TR13 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
2500 +: $ 0.57154
Stock 1000Can Ship Immediately
$ 0.63
Specifications
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Base Part Number: USB50815
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 3pF @ 1MHz
Applications: Ethernet
Power Line Protection: No
Power - Peak Pulse: 500W
Series: --
Voltage - Clamping (Max) @ Ipp: 32V
Voltage - Breakdown (Min): 16.7V
Voltage - Reverse Standoff (Typ): 15V
Unidirectional Channels: 2
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS (Transient Voltage Suppressor) diodes are type of semiconductor device that is designed to protect voltage-sensitive components from overvoltage transients such as electrostaic discharge (ESD) and inductive loads. This type of diode is often used in various applications, including computer motherboards, automotive, industrial, telecom equipment, etc. One example of a TVS diode is the USB50815E3/TR13.

The USB50815E3/TR13 device is suitable for a wide variety of applications that require transient protection. It offers fast response times and high-temperature capability while providing protection from overvoltage transients and ESD. It has a maximum breakdown voltage of 5.8V and a peak pulse power of 600W for an 8/20 microseconds pulse annual rate.

The USB50815E3/TR13 is well-suited for protecting high-speed data and other signal lines from damage due to voltage spikes or ESD, as it is capable of handling up to 6.5A of surge current. It is also suitable for TTL and CMOS logic in critical environments, as it provides high-frequency noise suppression, reducing risk of data corruption. The device is designed for surface mount applications.

The working principle of the USB50815E3/TR13 is based on the breakdown of the PN junction. When the voltage applied to the PN junction exceeds the breakdown voltage, current begins to flow through the junction and the device starts to conduct. This helps to protect the device from overvoltage transients and allows it to handle up to 6.5A of surge current. In addition, the USB50815E3/TR13 has a low-capacitance, low-capacitance diode which helps to reduce high-frequency noise.

In summary, the USB50815E3/TR13 is a type of TVS diode that is suitable for a variety of applications that require transient protection. It features fast response times, high temperature capability, and low-capacitance diode to reduce high-frequency noise. It is designed for surface mount applications and is capable of handling up to 6.5A of surge current.

The specific data is subject to PDF, and the above content is for reference

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