USBQNM50424E3/TR7 Circuit Protection

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TVS - Diodes, such as USBQNM50424E3/TR7, are used in many electrical applications to protect the circuitry from potential damage caused by electrical surges, static electricity, lightning, ESD, and high-speed switching. These diodes are designed to offer a very high degree of protection in electronic circuits and systems. By redirecting electrical surges to a safer pathway, TVS diodes can help ensure the safety of the equipment they are placed in.

What is USBQNM50424E3/TR7?

The USBQNM50424E3/TR7 is a diode that is used to protect electronic circuits and systems from transient voltage surges and ESD, or electrostatic discharge. It is an uni-directional device designed to work in multiple TVS configurations and has a lead spacing of 12.7 millimeters. The USBQNM50424E3/TR7 has a peak pulse power rating of 5 kilowatts, a peak surge current rating of 12 amp, and a reverse stand-off voltage rating of 24 volts. The diode features dual linear dielectric materials and has reverse breakdown voltage of 20 volts.

Application Fields

USBQNM50424E3/TR7 diodes are often used in automotive systems, communication systems, industrial equipment, and consumer electronics. They are designed to provide protection from voltage transients and electrostatic discharge in a wide variety of electronic equipment. The diode can also be used to protect against damage due to lightning strikes, as it features a dual linear dielectric material that provides very high insulation resistance.

Due to its small size and low cost, the USBQNM50424E3/TR7 is also used in portable devices, such as cell phones, MP3 players, and PDAs. By protecting these devices from electrical surges and ESD, these diodes can help ensure the longevity and performance of the device.

Working Principle

When exposed to a surge or ESD, the USBQNM50424E3/TR7 will absorb the excess energy, directing it to a safer pathway and away from the circuit it is designed to protect. The diode will automatically reset itself after the surge dissipates, returning the circuit to its original state.

This is achieved by a process called avalanche breakdown. When exposed to a significant reverse bias voltage, the diode’s p-n junction becomes highly conductive. This allows current to flow, and the energy is then dissipated as heat. The diode then returns to its non-conductive state when the reverse bias voltage is removed.

In addition, USBQNM50424E3/TR7 diodes feature very high clamping voltage, allowing them to safely absorb large surges in energy. This helps protect sensitive electronic equipment and systems from potential damage.

Conclusion

USBQNM50424E3/TR7 diodes are an important component of any electronic system, and offer reliable protection from voltage transients, surges, and ESD. Furthermore, they are low-cost and small in size, making them an ideal solution for many applications. By utilizing these diodes in an electronic circuit, the system can be protected from potential damage due to electrical surges.

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