| Allicdata Part #: | UTS1142G1P-ND |
| Manufacturer Part#: |
UTS1142G1P |
| Price: | $ 10.06 |
| Product Category: | Uncategorized |
| Manufacturer: | Souriau |
| Short Description: | FREE HANGING RECEPTACLE |
| More Detail: | N/A |
| DataSheet: |  UTS1142G1P Datasheet/PDF |
| Quantity: | 1000 |
| 25 +: | $ 9.14557 |
Specifications
| Series: | * |
| Part Status: | Active |
Description
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UTS1142G1P is a kind of semiconductor material developed for various electromagnetic devices. Its application field includes power electronic systems, computers and optoelectronic devices. It has a wide range of applications in various industrial fields, such as aerospace, automotive, communications and energy conservation.This material has good electrical insulation performance, low power consumption and high stability. It can withstand a variety of high temperature, humidity and chemical corrosion and has the characteristics of quick response and high reliability. Its surface insulated gate can be designed flexibly to maintain the stability of the system.Working principle of UTS1142G1P:1. P-N junction: The UTS1142G1P structure consists of a lightly doped n-type semiconductor and a heavily doped p-type semiconductor. The junction formed between them can be adjusted to obtain a variety of possibilities such as rectification, amplification, oscillation, switching, etc.2. Minority carrier process: It mainly includes diffusion, drift and trapping process. When a certain potential difference exists on the PN junction, a current will appear, which can be used as an external application to control the electrical and magnetic fields of the device.3. Injection process: Injection technology is the basis of semiconductor device application. Under the action of external electric force, electrons and holes can be injected at the PN junction. The electron concentration and hole concentration at the PN junction can be adjusted to modify the work efficiency of the device.4. Depletion layer process: When a certain voltage balance is applied to the PN junction, a depletion layer will appear, which means that no current passes through the PN junction. This is the basis of balanced power electronic device.Above are the application fields and working principle of UTS1142G1P. It is a kind of semiconductor material with strong stability, wide application range and low power consumption. It has a wide application in the field of optoelectronic devices, power electronic systems and computers.
The specific data is subject to PDF, and the above content is for reference
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