V140LA20APX10 Circuit Protection

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TVS diodes (or sometimes called transient voltage suppressors) and their related components Varistors, MOVs (metal oxide varistors) are widely used in electronic applications as surge protectors. The V140LA20APX10 belongs to this group of devices. This article is dedicated to the discussion of its application field and working principle.

Application

The V140LA20APX10 presents itself as a 3-electrode type of Silicon TVS diode. This device provides unidirectional protection against overvoltages of a wide range. It typically features low capacitance values and fast response time. Due to these qualities, the V140LA20APX10 is best used in applications that require an high level of protection from transients in the range of 5V .. 140V. Typical use fields are electronic circuits in automotive and industrial applications, electronic systems used in outdoor environments where ESD (electrostatic discharge) and surge events occur frequently, as well as interfaces which require to meet specific ESD suppression requirements such as USB 2.0/3.0 ones. Other related uses are in computers and peripherals, telecom devices, consumer electronics, medical equipment, home automation and motor controllers.

Features

The V140LA20APX10 exhibits a number of features that make the device optimal for the applications listed above. These include:

• High surge current capabilities, guaranteeing reliable and consistent protection even in the presence of multiple surge events occurring simultaneously.
• Low dynamic resistance, limiting the voltage drop across the device and preventing any false triggering of signals.
• Low clamping voltage values across an wide range of devices
• Low Gate-to-Cathode capacitance values to ensure fast transition towad the voltage clamping levels.
• High signal line attenuation to minimize high frequency interference.

Working principle

The V140LA20APX10 is based on the silicon avalanche diode structure (SAD). This type of diode has a semi-conductor structure composed of two regions referred to as P and N regions. The P-region has an exceptionally high concentration of positive charge, while the N-region has an exceptionally high concentration of negative charge. By applying an appropriate pulse voltage from a power source to the two regions, the charge carriers across the two regions begin to move, and as the voltage across the diode increases, a high electric field is generated. This field will become strong enough to cause impact ionization of the semi-conductor material, resulting in a surge of electrons and holes (which corresponds to an avalanche breakdown) across the two regions.

Once this breakdown occurs, it will produce a large voltage drop that will limit the voltage of the input pulse. The V140LA20APX10 is designed to have a low voltage drop and a high surge current capability to ensure that this input voltage is effectively clamped and will not cause any damage to the electronic components.

Conclusion

The V140LA20APX10 is an ideal device for applications that require reliable surge protection against transient voltages. It features low dynamic resistance, low capacitance values, and high signal line attenuation, making it the optimal choice for many electronic applications. Its working principle is based on the silicon avalanche diode structure, making sure that even extreme voltage variations are effectively clamped in a wide range of voltage levels.

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