V1PM12-M3/H Discrete Semiconductor Products

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The V1PM12-M3/H is a high-performance single rectifier diode providing high forward current rectification, power switching, and soft-recovery performance in a variety of different applications. Its single-rectifier design provides superior performance over traditional two diode solutions, while its low-voltage, low-capacitance construction ensures ultra-fast switching capability. The device also features an integrated electron source providing improved thermal design, power dissipation, and improved EMI suppression.

The V1PM12-M3/H is a high-current device for a variety of rectification and power switching applications, such as DC-DC converters, UPS systems, welders, power inverters and power supplies. With its small form factor, the V1PM12-M3/H is compact and can be easily accommodated in a variety of power-switching application environments.

The single-diode, singe rectifier design of the V1PM12-M3/H provides superior performance over two-diode solutions, owing to its superior reverse-recovery characteristics, low-voltage operation, and low-capacitance construction. With the device’s integrated electron source, the device’s subliminal capacitance is greatly minimized. This allows for superior switching speeds and low-voltage performance.

The V1PM12-M3/H utilizes a simple and reliable design to manage up to 12A of forward current rectification. This device is built using a reverse-recovery rectifier configuration that operates in a steady-state fashion, utilizing a single diode in the form of a triangular wave. This waveform gives the device a number of advantages over a conventional two-diode rectifier in terms of power-switching capabilities and thermal design due to the improved switching transition speed. This improved switching speed leads to higher efficiency, significantly reduced power losses, and improved EMI suppression.

The V1PM12-M3/H is constructed using a neat and efficient packaging, which it uses as an integrated electronic source. The device is also designed with a triple-layer thermal management system, which allows for improved thermal capabilities and enhanced power dissipation while still being able to cool the device. This combined with the device’s low-capacitance semiconductor material combine to give it excellent performance characteristics.

In summary, the V1PM12-M3/H is a single-rectifier diode providing superior forward current rectification, power switching, and soft-recovery performance. Its single-rectifier design ensures superior performance over two-diode solutions, while its low-voltage, low-capacitance construction ensures ultra-fast switching capability. The device is ideal for a variety of DC-DC converters, UPS systems, welders, power inverters and power supplies and its integrated electron source provides improved thermal design, power dissipation, and improved EMI suppression.

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