V251NA34

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A varistor is a type of voltage-dependent resistor (VDR). Specifically, it is a non-linear two-terminal device consisting of a mixture of semiconductors and other compounds. It is commonly used in electrical and electronic circuits to protect against transient overvoltages by clamping the voltage level to a specified maximum value. Varistors can be classified into two broad categories: VDRs and Voltage-Suppression Stacks (VSSs) based on their configuration.

The V251NA34, from Vishay Semiconductor, is a varistor designed to provide overvoltage protection to sensitive electronic components from transients and surges. The device is designed with small, ceramic-body and features a surface mount package with a height profile of 1.95mm max. The V251NA34 is designed to protect equipment from 4kV transient overvoltages, and can withstand Applied Voltage of up to 400V. It has an Operating Temperature of -55 to 85°C and can support a Climatic Category of 45/155/56. It typically dissipates Joule Heat of around 750 mJ and has an Insulation Resistance of 10GΩ min.

The V251NA34 has a number of application and working principles that make it a popular choice for voltage-dependent protection. Most notably, it is typically used in high-power switching circuits, AC control circuits, communication circuits, and automotive electronic systems. It is also used in power supplies, motor controls, and other high-voltage applications. The V251NA34 works on the principle of a zener diode, in which a PN junction between two p-type and n-type semiconductor materials is formed by diffusion. When a voltage exceeding the breakdown voltage of the junction is applied, the current through the junction increases exponentially and the voltage across the junction is clamped to the breakdown voltage. The V251NA34 has a clamping voltage of between 250 and 400V, which makes it suitable for Use in high voltage applications.

The working principle of the V251NA34 is based on a combination of two processes – diffusion and avalanche breakdown. When a voltage greater than the breakdown voltage is applied, the PN junction is reversed biased and the majority carriers of each side are forced to cross the junction and the built-in electric field traps the minority carriers from the opposite side of the junction. This forms an avalanche of charge carriers which further increases the electric field until it reaches a point where the electric field overcomes the polarization of the junction and breaks it down, resulting in the formation of a conduction path. Once breakdown happens, the voltage across the device is clamped to a certain value, limiting the voltage spike and protecting the electronic circuit.

In conclusion, the V251NA34 from Vishay Semiconductor is a varistor designed for overvoltage protection. Its application field and working principle is based on the zener diode principle, where a PN junction is formed and the voltage across the junction is clamped to a certain value by avalanche breakdown when the junction is reversed biased. The V251NA34 is typically used in applications such as high-power switching circuits, AC control circuits, communication circuits, and automotive electronic systems.

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