V2P6HM3/H Allicdata Electronics

V2P6HM3/H Discrete Semiconductor Products

Allicdata Part #:

V2P6HM3/HGITR-ND

Manufacturer Part#:

V2P6HM3/H

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 60V 2A MICROSMP
More Detail: Diode Schottky 60V 2A Surface Mount MicroSMP
DataSheet: V2P6HM3/H datasheetV2P6HM3/H Datasheet/PDF
Quantity: 4500
4500 +: $ 0.04234
9000 +: $ 0.03810
13500 +: $ 0.03387
31500 +: $ 0.03175
Stock 4500Can Ship Immediately
$ 0.05
Specifications
Series: Automotive, AEC-Q101, eSMP®
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 630mV @ 2A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 200µA @ 60V
Capacitance @ Vr, F: 195pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: MicroSMP
Supplier Device Package: MicroSMP
Operating Temperature - Junction: -40°C ~ 150°C
Description

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Introduction to V2P6HM3/H

The V2P6HM3/H is a single mask rectifier diode typically used in power management and motor control applications. It is able to provide high-frequency current conduction, low forward voltage drop, low leakage current, and high reliability. The device features ultra-fast switching times and is designed to offer performance and reliability in high temperature environments.

Applications of V2P6HM3/H

V2P6HM3/H diodes are ideal for medium and high voltage applications such as solar panel inverters, uninterruptible power supplies, industrial motor controllers and switch-mode supplies. They are also suitable for applications requiring fast switching, HIGH temperature operation and low power consumption. In addition, these devices are ideal for the protection of sensitive electronic components from voltage spikes, ESD and power surges.

Working Principle of V2P6HM3/H

The V2P6HM3/H is a single mask rectifier diode with a bidirectional current conduction capability. It uses a conductive silicon die to serve as the semiconductor material. The reverse bias applied across the diode’s p-n junction creates an electric field between the p and n regions, which allows current to be conducted by the diode in one direction only. This mechanism is the basis of the diode’s rectifier effect. The device features low reverse leakage current, fast recovery time and low forward voltage drop.

Conclusion

The V2P6HM3/H single mask rectifier diode is ideal for use in medium and high voltage applications, offering fast switching, high-temperature operation and low power consumption. It has a bidirectional current conduction capability, low forward voltage drop and low reverse leakage current, making it ideal for use in power management and motor control applications.

The specific data is subject to PDF, and the above content is for reference

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