V35PWM45-M3/I Allicdata Electronics

V35PWM45-M3/I Discrete Semiconductor Products

Allicdata Part #:

V35PWM45-M3/IGITR-ND

Manufacturer Part#:

V35PWM45-M3/I

Price: $ 0.39
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 45V 35A SLIMDPAK
More Detail: Diode Schottky 45V 35A Surface Mount SlimDPAK
DataSheet: V35PWM45-M3/I datasheetV35PWM45-M3/I Datasheet/PDF
Quantity: 1000
4500 +: $ 0.34738
9000 +: $ 0.33084
Stock 1000Can Ship Immediately
$ 0.39
Specifications
Series: Automotive, AEC-Q101, eSMP®, TMBS®
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 670mV @ 35A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 1.1mA @ 45V
Capacitance @ Vr, F: 4020pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Description

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The V35PWM45-M3/I is a highly efficient low voltage rectifier diode that is typically used in power circuits and has a wide range of applications. It is often used in powerline filter circuits, voltage limiting circuits, and electronic ballasts. It is also used in electronic power tools, automotive power supplies, AC-DC motor drives, and in the telecommunication industry.

The V35PWM45-M3/I is comprised of a P-type silicon semiconductor epitaxial layer, an N-type silicon layer, and a high voltage junction element. The P-type layer is responsible for providing the current flow, while the N-type layer provides the high voltage blocking capability. The junction element provides the necessary electrical insulation between the two layers and helps to ensure that voltage remains below the breakdown voltage.

The V35PWM45-M3/I has a reverse voltage of 35V and a forward current of 45A. This enables it to handle up to 1.6kW of power in a continuous operation. It also has a high surge current capability of up to 90A, making it suitable for a variety of applications.

The V35PWM45-M3/I has a high level of reverse voltage blocking capability and is capable of preventing any backflow of current. This prevents any damage that could be caused by high reverse voltages, such as electrolysis. The P-type layer also has the ability to sustain a high temperature range, up to 125°C, making it an ideal choice for applications with high temperature requirements.

The working principle of the V35PWM45-M3/I is based on the theory of voltage rectification. This is the process of converting AC current into DC current. When an external voltage is applied, the P-type layer conducts current while the N-type layer blocks it. This creates a one-way flow of current from the external voltage source to the device. The device then rectifies the current, converting the AC signal into a DC signal which can be used in a variety of applications.

The V35PWM45-M3/I is a very versatile device that can be used in a variety of applications. Its high voltage and current blocking capabilities make it an ideal choice for use in a variety of AC/DC applications. Its working principle of rectification makes it a great choice for powerline filter circuits and voltage limiting circuits. Furthermore, its high temperature range makes it an ideal choice for applications which require high temperature operation.

The specific data is subject to PDF, and the above content is for reference

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