V50100P-E3/45 Allicdata Electronics
Allicdata Part #:

V50100P-E3/45GI-ND

Manufacturer Part#:

V50100P-E3/45

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ARRAY SCHOTTKY 100V TO247
More Detail: Diode Array 1 Pair Common Cathode Schottky 100V 25...
DataSheet: V50100P-E3/45 datasheetV50100P-E3/45 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: TMBS®
Packaging: Tube 
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 25A
Voltage - Forward (Vf) (Max) @ If: 780mV @ 25A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 100V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-247AD (TO-3P)
Description

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The V50100P-E3/45 is a high voltage array that is composed of two 100V N-channel trench MOSFETs. This array provides a convenient grouping of two FETs in order to reduce package size. With the addition of this array, the MOSFETs are protected from overvoltage conditions, electro-static discharge (ESD), and excessive current conditions, making the V50100P-E3/45 an ideal device for various applications. This article will cover the applications field and working principles of the V50100P-E3/45.

Application Field

The V50100P-E3/45 is designed to be used in applications that require high voltage protection and current-limiting. Some examples of these types of applications include industrial, automotive, medical, and military applications. The array is ideal for use in power supplies, inverters, motor drives, and motor control circuits that require improved protection from high voltage and electrical overstress (EOS) conditions. Additionally, the device helps reduce the size of the package by combining two FETs in a single unit.

Working Principle

The V50100P-E3/45 has two MOSFETs and an array of zener diodes, making it suitable for high voltage protection. The MOSFETs are connected in parallel within the array, which allows for higher current flow than a single MOSFET. The combination of MOSFETs and zener diodes provides reverse-polarity protection while simultaneously limiting current flow. The zener diodes are configured in a series so that when the voltage reaches a certain point, the current is diverted away from the device and into the zener diode.

The V50100P-E3/45 also has ESD protection and has been designed to withstand up to 8kV of ESD. This protects the device from voltage spikes and static electricity. Additionally, the array has temperature protection and shutdown protection, which prevents the device from overheating and shutting down. The array also has overvoltage protection, which helps protect the device from excessive voltage.

Conclusion

The V50100P-E3/45 array is a useful device for applications that require high voltage protection and improved reliability. The device is ideal for use in industrial, automotive, medical, and military applications. It is composed of two MOSFETs and an array of zener diodes to provide reverse-polarity protection and current limiting. Additionally, the array features ESD, temperature, and overvoltage protection. This makes the V50100P-E3/45 an ideal device for high voltage protection and current-limiting applications.

The specific data is subject to PDF, and the above content is for reference

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