V8P12HM3_A/I Allicdata Electronics
Allicdata Part #:

V8P12HM3_A/I-ND

Manufacturer Part#:

V8P12HM3_A/I

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 120V 8A TO277A
More Detail: Diode Schottky 120V 8A Surface Mount TO-277A (SMPC...
DataSheet: V8P12HM3_A/I datasheetV8P12HM3_A/I Datasheet/PDF
Quantity: 1000
6500 +: $ 0.16253
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Series: Automotive, AEC-Q101, eSMP®, TMBS®
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 8A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 300µA @ 120V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Description

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A V8P12HM3_A/I is a rectifier diode that is typically used as a high-voltage rectifier in applications such as switched-mode power supplies (SMPS), telecom systems, relays, instrumentation, & industrial monitors.

The V8P12HM3_A/I is constructed with a ceramic and glass seal, which makes it suitable for applications with demanding environmental conditions. This part features an isolation distance up to 8kV and the ability to withstand operation in temperatures up to 175°C. Apart from the I and A type, there is also a aD type, which features an isolation distance of up to 16kV.

The working principle of the V8P12HM3_A/I rectifier is based on the PN junction. When a forward voltage is applied to the rectifier, electrons from the N-type material will diffuse across the junction into the P-type material, creating a potential barrier that prevents current from flowing in the opposite direction. This current flow through the rectifier is known as forward current.

Once the applied reverse voltage exceeds the breakdown voltage of the rectifier, the PN junction will break down and the reverse current will begin to flow. This current is known as reverse current, and it can lead to high power losses in the application if not managed properly.

Since the PN junction of the V8P12HM3_A/I provides effective protection against reverse currents, the device is commonly used in applications that require effective protection against voltage transients and surges. This device has a reverse recovery time of 5μs, which provides adequate protection against electrical transients.

In addition to its high-voltage rectifier capabilities, the V8P12HM3_A/I also offers a reverse ramp current protection feature. This ensures that the rectifier is protected against any over-current that might flow through it in the event of a fault. The device also features a low forward voltage drop, which helps to reduce power losses in the application.

The V8P12HM3_A/I is a versatile, high-performance rectifier diode that can be used in a variety of applications requiring high-voltage protection. Thanks to its high-isolation rating, reverse ramp current protection and low forward voltage drop, this device is an ideal choice for applications requiring high-voltage protection.

The specific data is subject to PDF, and the above content is for reference

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