Allicdata Part #: | V8P45-M3/87A-ND |
Manufacturer Part#: |
V8P45-M3/87A |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY 45V 4.3A TO277A |
More Detail: | Diode Schottky 45V 4.3A Surface Mount TO-277A (SMP... |
DataSheet: | V8P45-M3/87A Datasheet/PDF |
Quantity: | 1000 |
13000 +: | $ 0.14183 |
Series: | eSMP®, TMBS® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 45V |
Current - Average Rectified (Io): | 4.3A |
Voltage - Forward (Vf) (Max) @ If: | 580mV @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 600µA @ 45V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277A (SMPC) |
Operating Temperature - Junction: | -40°C ~ 150°C |
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Introduction
V8P45-M3/87A (hereinafter referred to as V8P45) is a single N-channel enhancement mode MOSFET of voltage-controlled, designed for power switching applications. It is a part of a series of power MOSFET family, offers the benefits of low on-resistance, low gate threshold voltage, and fast switching characteristics. This part is suitable for high speed, high efficiency and low power switching applications. It is especially ideal for DC/DC power conversion, load switch and high-speed switching applications in industrial and consumer electronic products.
Applications
- DC/DC power converters
- Load switches
- High-speed switching applications
- General purpose switching
- Industrial and consumer electronic products
Operating principle
V8P45 is an enhancement mode MOSFET, which means that it can be electrically controlled by the gate voltage. This MOSFET is constructed using an N-channel MOSFET structure and its gate is connected to the drain terminal. That is, when a positive voltage is applied to the gate terminal, it repels the electrons that are stored on it and in turn increases the current flow through the channel. This gate voltage can then be adjusted from low to high to vary the current flow through the device.
The MOSFET features a high input impedance which ensures low power losses. It also has a temperature-dependent breakdown voltage which limits leakage current during periods of high temperature. Furthermore, the threshold voltage of the part is tuned to minimize gate charge for minimal switching losses.
Features and benefits
- Low on-resistance
- Low gate threshold voltage
- Fast switching characteristics
- High input impedance
- Temperature-dependent breakdown voltage
Conclusion
V8P45 is an ideal choice for applications that require fast switching and low power consumption. Its low on-resistance, low gate threshold voltage, temperature-dependent breakdown voltage and high input impedance make it suitable for a wide variety of applications from general purpose switching, DC/DC power conversion, load switch and high-speed switching applications in industrial and consumer electronic products.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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V8P45-M3/87A | Vishay Semic... | 0.16 $ | 1000 | DIODE SCHOTTKY 45V 4.3A T... |
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