V8PM10S-M3/I Discrete Semiconductor Products |
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Allicdata Part #: | V8PM10S-M3/IGITR-ND |
Manufacturer Part#: |
V8PM10S-M3/I |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY 100V 8A TO277A |
More Detail: | Diode Schottky 100V 8A Surface Mount TO-277A (SMPC... |
DataSheet: | V8PM10S-M3/I Datasheet/PDF |
Quantity: | 13000 |
6500 +: | $ 0.14157 |
13000 +: | $ 0.13181 |
Series: | eSMP®, TMBS® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 780mV @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 200µA @ 100V |
Capacitance @ Vr, F: | 860pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277A (SMPC) |
Operating Temperature - Junction: | -40°C ~ 175°C |
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V8PM10S-M3/I is a rectifier diode, typically used for power flow. Rectifier diodes are devices that allow electricity to flow in one direction and block it from flowing in the opposite direction. The V8PM10S-M3/I provides a high-speed switch for higher power densities.
The V8PM10S-M3/I has a low forward voltage drop, which makes it suitable for high frequency applications. It is capable of operating at high junction and storage temperatures, as well as being resistant to thermal and magnetic shocks. The device also features low capacitance, which means it has a faster switching speed and can handle higher switching power levels.
The V8PM10S-M3/I can be used for power rectification in power circuits, in power rectification for mobile phones and tablets, and for high-speed switching in consumer electronic products. It can also be used in automotive systems, power supplies, and other high-temperature applications. The device is ideal for applications where high reliability and fast switching speeds are required.
The V8PM10S-M3/I has a working principle based on the PN junction diode and can be seen as two layers of alternate positive and negative charges. When a voltage is applied to the device, the positive current will flow through the P-type material, while the negative current will flow through the N-type material. This generates a blocking mechanism, whereby current flows only in one direction while it is blocked in the other direction. When the voltage is removed, the current stops.
The V8PM10S-M3/I is an efficient and reliable device, providing a reliable flow of power to a wide range of applications. It has a high switching speed, low forward voltage drop, and low capacitance, making it a great choice for many different types of applications. It is also highly resistant to thermal and magnetic shocks, making it suitable for applications where high reliability is a must.
The specific data is subject to PDF, and the above content is for reference
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