V8ZC05P

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

TVS (Transient Voltage Suppressor) diodes, MOVs (Metal Oxide Varistors) and Zener diodes are components designed to protect sensitive electronic circuitry from electrostatic discharge (ESD) and overvoltage transients. These components help to protect device\'s sensitive circuitry against damage by diverting the excess current to ground.

The V8ZC05P is an example of a TVS diode from the VETOP series. It is designed to protect electronic systems from overvoltage and ESD, and is used in a wide range of applications including laptops, TV sets, mobile phones, and more. The diode is offered in small packages, making it suitable for space-constrained designs while offering ESD protection up to 20 kV.

Application Field

V8ZC05P is a unidirectional TVS diode designed to protect sensitive equipment against overvoltages, overcurrents, and ESD. It is developed for cost-sensitive applications where long-term reliability is a necessity. Common applications of the V8ZC05P include, but are not limited to, automotive and servers, smartphones and tablets, industrial systems, computer peripheral devices, and consumer electronics.

The V8ZC05P is particularly well-suited for automotive applications due to its toleration of a wide range of temperatures (between -40°C and 150°C). This means the diode will remain reliable in challenging environments without degrading over time. It also features short response time of 3-5 ns, making it suitable for high-frequency applications.

Working Principle

When exposed to an overvoltage or ESD, the V8ZC05P diode will very shortly conduct in the forward direction and clamp the overvoltage on the working pin. This will help to protect sensitive electronics and microchips, and prevent them from faults or damage. The diode begins to reduce the ESD to a safe voltage before returning to its initial state.

The V8ZC05P works on the principle that when the voltage on its anode is higher than the voltage on its cathode, holes in the p-region and electrons in the n-region are created. As these holes and electrons migrate towards the depletion area, they combine, causing a voltage drop across the pn junction. When this depletion area is fully formed a potential barrier is created.

The larger the voltage that is put across the diode is, the wider the depletion area will become, allowing for greater current flow. Due to this, the V8ZC05P can be used to protect devices from voltage surges by safely clapping the surge and diverting excess current away from the device.

V8ZC05P is designed to withstand multiple overvoltage transients and ESD strikes with no degradation in its clamping performance. It is also manufactured using a patented in-line wafer process, and certified in line with AEC-Q101 standards, giving it excellent reliability and long-term performance.

The specific data is subject to PDF, and the above content is for reference