VB20M120C-E3/8W

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Diodes - Rectifiers - Arrays

The VB20M120C-E3/8W is a rectifier array module in the form of an insulated-gate bipolar transistor (IGBT) package. Its application scope covers important industrial, automotive, and telecom sectors.

The VB20M120C-E3/8W features overvoltage, overcurrent, and overheat protection. It has a 1,200 V blocking voltage and 20A repetitive peak current capability. The maximum operating temperature range is -40 to 125°C.

Working Principle

The VB20M120C-E3/8W is a four-diode module which works on the principle of alternately switching the output when an alternating current is applied to the input. Each of the four diodes allows the current to flow through it in only one direction, while blocking it in the opposite direction. As a result, current only flows through the module in one direction, and no current flows through the module in the opposite direction.

Each diode consists of two electrodes, a cathode and an anode. When an input is applied to the module, the cathode of one of the diodes becomes positive with respect to the anode, thus allowing current to flow through the diode and allowing the output to be switched. Meanwhile, the other three diodes remain reverse-biased and do not allow any current to flow through them.

The main advantage of this circuit is that it ensures that no current flows through the output in the opposite direction, making it a good choice for applications that require a high level of power efficiency. Additionally, it also helps to reduce power losses due to the low-voltage drop across each of the diodes when they are in forward-biased mode.

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