VB60100C-M3/8W Discrete Semiconductor Products

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Diode is an electronic device with two-terminal, which enables a current flowing in one direction only. In solid-state device, the classical operate and structure is based considered on a PN junction in which one terminal is p-type semiconductor and the other is n-type semiconductor. The diode often referred as a rectifier, is a unidirectional device which allows current to flow in one direction only.

VB60100C-M3/8W

The VB60100C-M3/8W is a high-voltage, double-bonded, silicon zener diode, designed for use in low-power voltage regulation and voltage-clamping applications. The unique feature of VB60100C-M3/8W is its high conductance, which offers superior power dissipation characteristics at high ambient temperatures.

Applications

The VB60100C-M3/8W is ideal for use in applications requiring fast, low-loss voltage regulation and voltage-clamping. Typical applications include uninterruptible power supplies, voltage limiting/regulating circuits, motor control/protection systems, and numerous medical, automotive, and communication systems. In addition, the VB60100C-M3/8W is well-suited for use in test fixtures, circuit modules, and many other general-purpose clamping and regulation circuits.

Working Principle

The VB60100C-M3/8W is based on a high-voltage, double-bonded, silicon zener diode, which uses an optimized P-N junction as its active element. This P-N junction is designed to allow current to flow through it in one direction only. When an external voltage is applied to the diode, the P-N junction will oppose the flow of current through the diode until the voltage reaches the diode’s peak breakdown voltage, at which point the current will begin to flow freely. This peak breakdown voltage is referred to as the zener voltage.

Direction Control

When the VB60100C-M3/8W is activated by a voltage, the flow of current through the diode is regulated by the two parts of the P-N junction, the N-type layer (built from electrons) and the P-type layer (built from holes). The current flow through the diode will travel in a direction that opposes the built-in electric field at the interface between the P-type and N-type layers. This built-in electric field creates a strong force that opposes current flow through the device and is the main contributor to the diode’s unique “diode effect”.

Voltage Control

The VB60100C-M3/8W is designed to protect circuits from high voltages or power surges. When the applied voltage exceeds the diode’s zener voltage, the diode will clamp or limit the voltage, thereby protecting the circuit from damage. This voltage control feature is useful for protecting sensitive circuits, such as those found in automotive, communications, and medical applications.

Thermal Characteristic

The VB60100C-M3/8W features a low forward voltage, which helps to minimize power losses during operation in high-temperature environments. When the device is placed in high-temperature operating conditions, a higher forward voltage can be observed, but due to its low forward voltage characteristics, the VB60100C-M3/8W is able to operate at much higher temperatures than comparable devices.

Conclusion

The VB60100C-M3/8W is a high-voltage, double-bonded, silicon zener diode that is designed for use in low-power voltage regulation and voltage-clamping applications. The unique feature of VB60100C-M3/8W is its optimized P-N junction, which provides a strong electric field that opposes current flow through the device and allows it to effectively protect circuits from high voltages or power surges. Additionally, the diode’s low forward voltage and high conductance characteristics allow it to operate in high-temperature environments.

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