VCUT03E1-SD0-G4-08 Circuit Protection

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TVS diodes are an essential component of transient protection systems, as their fast response and low clamping voltage help to minimize both the surge current and voltage caused by transient events. VCUT03E1-SD0-G4-08 is a TVS diode designed to protect 5V and 3.3V systems from electrostatic discharge (ESD) transients.

Application Field & Working Principle

VCUT03E1-SD0-G4-08 is designed for use in applications where ESD is present, such as telecommunications, automotive, industrial and computer systems. It is capable of handling ESD transients of up to 8kV contact discharge and 15kV air-gap discharge. The diode is also suitable for differential or common mode protection.

The VCUT03E1-SD0-G4-08 consists of a silicon diode that is connected between two electrodes. The breakdown voltage is 4V which ensures that the diode is capable of handling relatively high peak voltages without conducting excessive current. When a high transients occurs, the diode will quickly switch from a non-conducting to low impedance state, allowing the voltage to be safely clamped to a lower level. The non-conducting state is formed by the depletion region in the diode junction which is created by the applied reverse bias voltage. The reverse bias is higher than the diode\'s breakdown voltage so that the diode can start conducting when a high transient voltage is applied.

In addition to ESD protection, the VCUT03E1-SD0-G4-08 can also provide protection from high frequency electromagnetic interference (EMI) and radio frequency interference (RFI). In this application, the diode is used to pass low frequency signals while blocking higher frequency interference. This is done by using the diode\'s low breakdown voltage to bias the transistor in a conductive state. This conductive state is created by the bias voltage provided by the diode, blocking any higher frequency signals from passing through.

VCUT03E1-SD0-G4-08 is designed for use in a variety of applications where ESD and EMI/RFI protection are required. It is particularly well suited for use in automotive, telecommunications, computer and industrial systems. The diode\'s low breakdown voltage and fast response allow it to provide reliable protection against high transients and EMI/RFI interference.

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