VDZT2R6.8B Discrete Semiconductor Products

VDZT2R6.8B Application Field and Working Principle

The VDZT2R6.8B is a single Zener diode for use in various applications. It enables a designer to regulate a voltage source by putting the Zener into a series circuit with the other components. The device features an integrated reverse energy protection, low voltage coefficient, low parasitic capacitance, low leakage current, and low string-to-ground capacitance. The device is characterized by a uniform forward voltage drop, making it useful in both low-power and high-power applications.

Application Field

This type of Zener diode can be used in a variety of applications. They can be used in voltage regulation, rectifying circuits, noise suppression, controlling Vgs in power MOSFETs, protecting integrated circuits, and many other control applications. Due to its low voltage coefficients and its reverse energy protection, the VDZT2R6.8B is an ideal device for low-voltage circuits, such as those found in consumer electronics.

Working Principle

The Zener diode works by diverting the excess current away from other components when a specific voltage is reached. Zener diodes have a low reverse forward bias which enables the current to flow in the opposite direction when the threshold voltage is exceeded. This allows the current to be diverted away from other components, creating a voltage regulation barrier. This allows the other components to remain operating within the desired levels at all times.

VDZT2R6.8B single Zener diode can provide reliable, cost effective and easy-to-use solutions in many applications. They offer superior performance over other types of Zener diodes due to their low voltage coefficients, integrated reverse energy protection, low parasitic capacitance, low leakage current, and low string-to-ground capacitance. Their uniform forward voltage drop makes them ideal for low- and high-power applications, making them the perfect choice for many different scenarios.