VEMT2503X01 Sensors, Transducers

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Collector Emitter Breakdown (Max):	20V
Current - Collector (Ic) (Max):	50mA
Current - Dark (Id) (Max):	1nA
Wavelength:	850nm
Viewing Angle:	70°
Power - Max:	100mW
Mounting Type:	Surface Mount
Orientation:	Top View
Operating Temperature:	-40°C ~ 100°C (TA)
Package / Case:	2-SMD, Z-Bend

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Introduction to VEMT2503X01 Optical Sensor - Phototransistor

VEMT2503X01 is an optical sensor - phototransistor used in a wide range of application fields. It is a popular device thanks to its high performance and reasonable price. Phototransistor is a type of bipolar transistor that has an active region that is sensitive to light. It is typically used in combination with other components to convert light to an electrical signal. In this article, we will discuss the application fields and working principles of the VEMT2503X01 optical sensor - phototransistor.

Application Fields of VEMT2503X01 Optical Sensor - Phototransistor

The VEMT2503X01 can be used in many applications, such as:

• Light-activated switches
• Television remote control receivers
• Optical mouse sensing
• Photodetective applications
• Optical detection systems

The VEMT2503X01 is a popular choice for these applications because it is a high-performance device with a relatively low price.

Working Principle of VEMT2503X01 Phototransistor

The working principle of the VEMT2503X01 phototransistor is based on the photovoltaic effect. When light is incident onto the phototransistor’s active region, it creates an electrical current. The current is then amplified and used for the desired application.The VEMT2503X01’s active region comprises of a PN junction. Depending on the type of phototransistor, the PN junction may be formed between either two N-type or two P-type semiconductor materials. Photons of light that are incident on the junction create electron-hole pairs in the semiconductor material. Since these electron-hole pairs are mobile, their presence creates a voltage difference between the base and emitter leads of the transistor. This voltage difference is then amplified by the built-in transistor and used for the desired application.

Conclusion

To summarize, the VEMT2503X01 is an optical sensor - phototransistor used for a variety of applications. Its working principle is based on the photovoltaic effect, in which photons of light incident on the PN junction create an electrical current. Due to its high performance and reasonable price, the VEMT2503X01 is a popular choice for this type of applications.

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