VEMT2523SLX01 Allicdata Electronics

VEMT2523SLX01 Sensors, Transducers

Allicdata Part #:

VEMT2523SLX01TR-ND

Manufacturer Part#:

VEMT2523SLX01

Price: $ 0.19
Product Category:

Sensors, Transducers

Manufacturer: Vishay Semiconductor Opto Division
Short Description: NPN PHOTO TRANSISTOR SMD SIDE LO
More Detail: Phototransistor 850nm Side View 2-SMD, Side View
DataSheet: VEMT2523SLX01 datasheetVEMT2523SLX01 Datasheet/PDF
Quantity: 6000
3000 +: $ 0.16934
6000 +: $ 0.16330
15000 +: $ 0.16088
30000 +: $ 0.15725
Stock 6000Can Ship Immediately
$ 0.19
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 50mA
Current - Dark (Id) (Max): 1nA
Wavelength: 850nm
Viewing Angle: 70°
Power - Max: 100mW
Mounting Type: Surface Mount, Right Angle
Orientation: Side View
Operating Temperature: -40°C ~ 100°C (TA)
Package / Case: 2-SMD, Side View
Description

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Optical Sensors - Phototransistors

A phototransistor is a semiconductor device used as a transducer to detect light. It is the logical fusion of a photodiode and a transistor and is divided into two categories – a back-illuminated version and a side-illuminated version, depending on the type of illumination being used. The back-illuminated version requires light to be incident directly on its collector, while the side-illuminated version requires light to be incident directly on its emitter. Regardless of the type, all phototransistors take advantage of the same basic working principle.

VEMT2523SLX01 Application Field and Working Principle

The VEMT2523SLX01 Phototransistor is a side-illuminated version designed for low detection thresholds and low dark current leakage. It is specifically optimized for certain applications such as ambient light sensing (ALS), proximity detection, and optical communications, among others. This device utilizes the photoelectric effect, which states that the current produced in a photodiode is proportional to the incident light intensity. In other words, when light hits the emitter of a phototransistor, it produces a current which is then amplified by a transistor connected in parallel with the photodiode, thus producing an amplified current which reflects the incident light intensity.

The VEMT2523SLX01 features an extremely low detection threshold, making it suitable for applications such as IR remote controls, gesture recognition, image sensors, and medical sensors, among others. The device also has a wide spectral range of up to 900nm, with peak sensitivity at 940nm, making it suitable for a wide range of applications. The VEMT2523SLX01 also has a fast response time, making it suitable for high speed applications such as barcode readers, optical communication links, and medical imaging.

The low dark current leakage of the device helps to reduce power consumption while still maintaining a fast response time. This is especially important in battery operated applications such as mobile phones, smart watches, and other portable devices.

The VEMT2523SLX01 is suitable for a wide range of applications due to its low detection thresholds, wide spectral range, and fast response time. Furthermore, its low dark current leakage helps to reduce power consumption while still maintaining a fast response time. In addition, its robust housing and operating temperature range make it suitable for use in harsh environments.

The specific data is subject to PDF, and the above content is for reference

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