Allicdata Part #: | VF10150C-M3/4W-ND |
Manufacturer Part#: |
VF10150C-M3/4W |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ARRAY SCHOTTKY 150V ITO220 |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 150V 5A... |
DataSheet: | VF10150C-M3/4W Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.28598 |
Series: | TMBS® |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 150V |
Current - Average Rectified (Io) (per Diode): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 1.41V @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 150V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | ITO-220AB |
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The VF10150C-M3/4W rectifier diode array is an advanced technology module specifically designed for high power switching applications. It is a powerful tool for managing and controlling electrical loads.
VF10150C-M3/4W rectifier diodes are constructed as an integrated module with a high-power, low-inductance design. The rectifier diode array consists of three dual rectifier diodes, each protected by its own built-in temperature-sensing structure.
The rectifier diode array is designed to withstand high current and is capable of providing tight voltage regulation even in high power applications. The module offers a low on-state voltage drop, low forward conduction losses, and high surge immunity. In addition, the module also offers "on-board" thermal compensation, which prevents overkill during avalanche breakdown conditions.
The designated application fields of VF10150C-M3/4W rectifier diode array includes high-frequency switching power converters and motor drives. It can also be used in any application where the high-power capability and low-inductance design are desired.
The working principle of VF10150C-M3/4W rectifier diode array is based on blocking of electrical current flow between the anode and the cathode. This is achieved by applying a small electric potential or voltage across P and N terminals of the device. When forward biased, the diode is said to be ‘forward conducting’. In this state, current is able to flow through the device in one direction. However, when the diode is reverse biased, the voltage across the diode is too high to allow current to pass through.
The VF10150C-M3/4W rectifier diode array has many advantages compared to the traditional silicon switching diodes. It offers a low power loss and low power dissipation, as well as high surge immunity. Additionally, it provides high-frequency switching capabilities and temperature-controlled regulation. The diode package also allows for increased scalability with multiple diodes connected in series.
Overall, VF10150C-M3/4W rectifier diode array is an advanced module specifically designed for high power switching applications. It offers various benefits such as low power loss, high frequency switching, temperature-controlled regulation, and scalability. This makes VF10150C-M3/4W rectifier diode array a good selection for various power applications.
The specific data is subject to PDF, and the above content is for reference
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