Series:	TMBS®
Packaging:	Tube
Part Status:	Active
Diode Configuration:	1 Pair Common Cathode
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	200V
Current - Average Rectified (Io) (per Diode):	15A
Voltage - Forward (Vf) (Max) @ If:	1.1V @ 15A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	160µA @ 200V
Operating Temperature - Junction:	-40°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack, Isolated Tab
Supplier Device Package:	ITO-220AB

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Introduction

The VF30200C-E3/4W is a kind of diode/rectifier/array utilised for power conversion. It is a 30-A, 200V, Schottky diode featuring low forward voltage. The VF30200C-E3/4W is the perfect choice for Power over Ethernet (PoE) applications, dc-to-dc converters and other telecom applications.

Application Field

The VF30200C-E3/4W is a rectifier array with a Schottky diode and low forward voltage, allowing it to be used in a wide range of applications. The device is best suited for non-isolated Power over Ethernet (PoE) applications, dc-to-dc converters and other telecom applications.The Schottky diode enables the VF30200C-E3/4W to provide high-efficiency rectification at a lower voltage drop than a standard rectifying diode. The low diode voltage makes the VF30200C-E3/4W ideal for use in high-speed switching applications, such as dc-to-dc converters, which require a low forward voltage to minimise power dissipation.The VF30200C-E3/4W is also ideal for use in a wide range of telecom applications, as it delivers low forward voltage and low temperature rise, as well as low capacitance. This makes the VF30200C-E3/4W suitable for use in high-frequency, high-voltage telecom applications, particularly Power over Ethernet (PoE) applications.

Working Principle

The VF30200C-E3/4W utilises a Diffused-Junction Schottky diode to enable efficient, low-current rectification. The low-forward voltage of the Schottky diode of the VF30200C-E3/4W minimises power dissipation, allowing high-efficiency operation, even at high-current levels.The diode is capable of carrying a current of up to 30A and is designed to deliver a low junction-to-case thermal resistance of 2.2°C/W when mounted on a heatsink. The low thermal resistance of the VF30200C-E3/4W allows the power density in PoE and other telecom applications to be increased, while eliminating the need for additional cooling solutions.The VF30200C-E3/4W also provides a low on-state forward voltage of 0.1V and has a low reverse recovery time of 8ns. This ensures that the diode will provide excellent transient performance and can switch quickly for fast-switching applications. The low-capacitance of the diode also allows it to be used in high-frequency, high-voltage applications.

Conclusion

The VF30200C-E3/4W is a versatile diode/rectifier/array which enables efficient power conversion. The Schottky diode of the VF30200C-E3/4W features low forward voltage, making it ideal for use in PoE and other high-speed switching applications. The low thermal resistance of the diode ensures it can operate at high current levels while providing low temperature rise and low capacitance, making it suitable for use in high-frequency applications.

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