VFT760-M3/4W

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The VFT760-M3/4W is a high-power rectifier diode designed for high-current applications. It is a single diode, also known as a P-I-N junction rectifier. The VFT760-M3/4W is commonly used in power supplies, UPS systems, and solar power inverters. It is well suited for various high-power AC/DC conversion applications.

The VFT760-M3/4W has a low forward voltage drop, low reverse leakage current, high surge current capability, and temperature rating up to 175°C. The VFT760-M3/4W has a high-power rating of 760W, making it suitable for use in higher-power applications. The VFT760-M3/4W has a high efficiency and low internal thermal resistance, providing excellent heat dissipation characteristics. The package is also lead-free and RoHS compliant.

The VFT760-M3/4W application field includes automotive, power management, consumer electronics, LED lighting, and high current rectification. It can also be used in renewable energy systems, such as solar energy, where high-power rectification is required. It can be used as a rectification device for AC/DC conversion and as a high-side switch in DC/DC converters.

The working principle of the VFT760-M3/4W is based on P-I-N junction rectification. The P-type material, which is positively charged, is connected to the anode and the N-type material, which is negatively charged, is connected to the cathode. When positive voltage is applied to the anode of the diode, forward current flows from the anode to the cathode, creating a forward-biased P-I-N junction.

When reverse voltage is applied to the diode, the junction is reverse biased and no current flows through. The reverse voltage is limited to a certain voltage (the peak inverse voltage rating of the diode) and if exceeded, it can cause the junction to breakdown and become conductive. The current/voltage characteristics of the P-I-N junction rectifier vary depending on the specific voltage applied.

The VFT760-M3/4W is a high-power rectifier diode designed for a variety of high-current applications. Its high efficiency and low internal thermal resistance makes it well suited for DC/DC converters, AC/DC conversion, and renewable energy systems. The P-I-N junction rectification allows the diode to be highly efficient in its forward biased state, while still maintaining low levels of reverse leakage current.

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