VIT2080S-M3/4W Allicdata Electronics
Allicdata Part #:

VIT2080S-M3/4W-ND

Manufacturer Part#:

VIT2080S-M3/4W

Price: $ 0.36
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 20A 80V TO-262AA
More Detail: Diode Schottky 80V 20A Through Hole TO-262AA
DataSheet: VIT2080S-M3/4W datasheetVIT2080S-M3/4W Datasheet/PDF
Quantity: 1000
2000 +: $ 0.32386
Stock 1000Can Ship Immediately
$ 0.36
Specifications
Series: Automotive, AEC-Q101
Packaging: Tube 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 20A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 700µA @ 80V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -55°C ~ 150°C
Description

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The VIT2080S-M3/4W is a single rectifier diode, which is widely used in power supplies, DC power circuits and rectifying circuits. It has the advantages of small size and low voltage drop when conducting a given current. In addition, it has extremely low reverse current, low forward voltage, low leakage current and high temperature operating capability.

The most common application for VIT2080S-M3/4W is in power supplies and DC power circuits, where it is used for rectifying alternating current (AC) power into direct current (DC). It is also used for rectifying high voltage AC power for use in low voltage DC circuits. The diode is also commonly used in electronic equipment requiring small, low-cost, low-leakage current circuiting.

The working principle of VIT2080S-M3/4W diode is based on the properties of two distinct regions or layers called P-type and N-type. The P-type layer is doped with a higher level of doping agent than the N-type layer. This creates a voltage gradient, causing electrons in the N-type region to be attracted to the P-type region. When reverse biased, the electric field across the diode pushes the induced charge carriers away from the junction, resulting in a high resistance, while forward biasing the diode reduces the depletion region and the barrier potential, allowing electrons to travel from the N-type region to the P-type region, resulting in a low resistance.

When current passes through the VIT2080S-M3/4W diode, it creates a voltage drop between its cathode and anode terminals. This voltage drop, usually referred to as the forward voltage drop, is determined by the polarity of the current. When the current passes through the diode in the forward direction, a relatively low voltage drop is created, typically 0.5-0.7V for VIT2080S-M3/4W. When the current passes through the diode in the reverse direction, the voltage drop is much higher, typically 3-5V.

The VIT2080S-M3/4W diode is also used in temperature control and protection applications. When current is passed through the diode in the forward direction, the diode junction heats up, resulting in an increase in the voltage drop across the diode. This increase in voltage drop is known as the thermal voltage drop, and can be used to accurately measure the temperature of the diode junction. This provides an integrated heating and cooling system for power supplies, protecting the circuitry from overheating.

In conclusion, VIT2080S-M3/4W diode is a versatile and cost-effective single rectifier diode, with a number of applications. Its low voltage drop and temperature-measuring capabilities make it an ideal choice for use in power supplies, DC power circuits and rectifying circuits. It is also used in temperature control and protection applications, providing an integrated heating and cooling system for power supplies.

The specific data is subject to PDF, and the above content is for reference

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