VLZ20B-GS18

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Diodes - Zener - Single

The VLZ20B-GS18 is a single zener diode designed for use in noise protection and voltage regulation applications. It is a small, surface-mount packaging and is rated for operating temperatures from -55°C to +125°C.

The VLZ20B-GS18 is specifically designed to protect sensitive electronic components from supply voltage spikes and other induced noise. It has a 20 V zener rating and a 5% tolerance. The VLZ20B-GS18 can be used in low-voltage, high-current circuits, typically up to 350 mA. ]

Features

The VLZ20B-GS18 has a low turn-on voltage (1.2 V max) and a high surge current capability at temperatures up to +125°C (2.8 A max). It has a 60 mV voltage drop at a 1 A current. This diode also has a fast recovery time, low reverse leakage current, and a low thermal resistance.

Applications

The VLZ20B-GS18 is best suited for use in noise protection and voltage regulation applications. It can also be used to avoid excessive voltage in power supplies and digital circuits, and as protection for semiconductor devices from overvoltage transients. It can also be used in low-voltage, high-current circuits such as RF power amplifiers (RFPA) and microwave communication systems.

Working Principle

The VLZ20B-GS18 operates on the principle of the reverse breakdown phenomenon. When the voltage across the diode exceeds its breakdown voltage (also called the Zener voltage), it conducts current in the reverse direction. This leads to a voltage drop across the diode, which is maintained at the Zener voltage. This allows the diode to protect the circuit in which it is connected from overvoltages.

The VLZ20B-GS18 is a small, surface-mount zener diode designed for use in noise protection and voltage regulation applications. It has a 20 V zener rating and a 5% tolerance, and it is rated for operating temperatures from -55°C to +125°C. It has a low turn-on voltage and a high surge current capability, and it can be used in low-voltage, high-current circuits up to 350 mA. The VLZ20B-GS18 uses the reverse breakdown phenomenon to provide protection against excessive voltage in power supplies and digital circuits and to protect semiconductor devices from overvoltage transients.

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