VLZ5V1B-GS18 Allicdata Electronics
Allicdata Part #:

VLZ5V1B-GS18-ND

Manufacturer Part#:

VLZ5V1B-GS18

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 5.07V 500MW SOD80
More Detail: Zener Diode 5.07V 500mW Surface Mount SOD-80 Quad...
DataSheet: VLZ5V1B-GS18 datasheetVLZ5V1B-GS18 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 5.07V
Tolerance: --
Power - Max: 500mW
Impedance (Max) (Zzt): 20 Ohms
Current - Reverse Leakage @ Vr: 2µA @ 2V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Supplier Device Package: SOD-80 QuadroMELF
Description

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Diodes - Zener - Single

The VLZ5V1B-GS18 is a precision, single-pole, unidirectional, switching and voltage regulation diode, designed for use as a Zener diode. This diode is designed for surface mounting, with excellent thermal s well as electrical characteristics, making it suitable for a wide range of applications.

The VLZ5V1B-GS18 has a breakdown voltage of 5V and a maximum allowable power dissipation of 250mW, both at a temperature of 25°C. It is the ideal choice for low forward voltage drop, high current-handling capacity and protection in environments where high-temperature operation is not required. It is available in TO-220 and SOT-223 packages.

The VLZ5V1B-GS18 is a suitable choice for many applications as its low forward voltage drop and high current-handling capacity make it a cost-effective solution. It can be used in power electronic systems such as inverters and power supplies, as well as in optical instruments like cameras and projectors. It is particularly suitable for battery-powered systems, where its low forward voltage drop offers improved power efficiency.

Working Principle

The VLZ5V1B-GS18 operates according to the principle of the avalanche breakdown of a reverse-biased P-N junction. When the applied voltage reaches the breakdown voltage of the P-N junction, the diode conducts rapidly in the reverse direction, leading to a higher voltage across the junction than the breakdown voltage. This is referred to as the Zener effect.

The diode also features a maximum forward current rating, beyond which the diode ceases to function due to thermal runaway. This can be prevented by using a surge-current limiting resistor. The resistor should limit the peak current to a value within the safety limits of the diode.

Advantages

The main advantages of the VLZ5V1B-GS18 are its low cost and high current-handling capacity. It is also easy to integrate into a variety of systems due to its small size, low thermal resistance and low forward voltage drop. Its low power dissipation also makes it ideal for battery-powered systems. The diode also has excellent noise immunity, providing reliable operation in noisy environments.

Disadvantages

The main disadvantage of the VLZ5V1B-GS18 is its lack of temperature stability. Its breakdown voltage can vary significantly with changes in temperature and operating conditions, which can lead to inaccurate voltage regulation. It also has a relatively low maximum power dissipation, which limits its use in power electronic applications.

Conclusion

The VLZ5V1B-GS18 is a low-cost, high current-handling capacity diode, designed for use as a Zener diode. Its low forward voltage drop and high current-handling capacity make it ideal for many applications, particularly in battery-powered systems. However, it is limited by its lack of temperature stability and its relatively low maximum power dissipation.

The specific data is subject to PDF, and the above content is for reference

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