Allicdata Part #: | VN02AN-11-E-ND |
Manufacturer Part#: |
VN02AN-11-E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | STMicroelectronics |
Short Description: | IC DVR HI SIDE SSR PENTAWATT HOR |
More Detail: | N/A |
DataSheet: | VN02AN-11-E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Voltage - Supply (Vcc/Vdd): | Not Required |
Base Part Number: | VN02 |
Supplier Device Package: | 5-PENTAWATT |
Package / Case: | Pentawatt-5 (Vertical, Bent and Staggered Leads) |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Fault Protection: | Over Temperature |
Features: | -- |
Input Type: | Non-Inverting |
Rds On (Typ): | 350 mOhm (Max) |
Current - Output (Max): | 7A |
Series: | -- |
Voltage - Load: | 7 V ~ 36 V |
Interface: | On/Off |
Output Type: | N-Channel |
Output Configuration: | High Side |
Ratio - Input:Output: | 1:1 |
Number of Outputs: | 1 |
Switch Type: | General Purpose |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
VN02AN-11-E is a power distribution switch, load driver, and part of NVE Corporation’s protection, signal conversion, and signal distribution lines. This device operates as a bidirectional switch, allowing two powering sources to be alternated or two loads to be switched, or both. It is designed to operate safely and reliably in a wide variety of high-power, low-leakage, and high-temperature applications.
The device is available with PNP and NPN package designs. The PNP version uses two high-voltage MOSFETs between power input and output, while the NPN version uses two low-voltage MOSFETs between power input and output. Both designs have dual POL (Power Output Level) configurations, allowing for accurate switching between different power sources.
The main application for VN02AN-11-E is in the distribution of power and protection of sensitive electrical components in low-power, high-quality automotive and industrial/telecom systems. It can also be used as a load driver in high-power applications in the same system.
VN02AN-11-E has several features that make it a good choice for these applications. First, it has a low on-resistance of only 0.75 mΩ and a low power off leakage current of only 0.15 uA, which makes it suitable for applications in which maximum efficiency and reliability are demanded. Second, its high-voltage, low-capacitance body helps to provide superior operation when switching high-frequency, high-power signals. Third, its overvoltage protection circuit prevents unexpected voltage surges from affecting devices connected to it.
The VN02AN-11-E power distribution switch, load driver device works by using two MOSFETs in a reverse direction, in order to switch the power between two sources. The two power sources can be either two independent power rails (signified by a single voltage rating), or one power rail with two loads (one of which may be a resistor). When two independent power sources are present, the MOSFETs allow seamless control of output power to each of the sources.
When two loads are connected to a single power rail, the MOSFETs will switch between load 1 and load 2. This configuration is useful for providing fast switching of high-power signals, which can be used for a variety of applications.
The VN02AN-11-E power distribution switch, load driver is a robust and reliable device that can be used in a wide range of high-power, low-leakage, and high-temperature applications. Its low on-resistance and low power off leakage current make it an ideal choice for efficient, reliable power distribution, as well as protection of sensitive electronic components. Its high-voltage and low-capacitance body is ideal for high-frequency, high-power signal switching. Lastly, its overvoltage protection circuit protects connected devices from voltage surges.
The specific data is subject to PDF, and the above content is for reference
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