Allicdata Part #: | VND3NV04-1-ND |
Manufacturer Part#: |
VND3NV04-1 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET POWER OMNIFET II IPAK |
More Detail: | N/A |
DataSheet: | VND3NV04-1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Voltage - Supply (Vcc/Vdd): | Not Required |
Base Part Number: | VN*3NV |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Fault Protection: | Current Limiting (Fixed), Over Temperature, Over Voltage |
Features: | -- |
Input Type: | Non-Inverting |
Rds On (Typ): | 120 mOhm (Max) |
Current - Output (Max): | 3.5A |
Series: | OMNIFET II™, VIPower™ |
Voltage - Load: | 36V (Max) |
Interface: | On/Off |
Output Type: | N-Channel |
Output Configuration: | Low Side |
Ratio - Input:Output: | 1:1 |
Number of Outputs: | 1 |
Switch Type: | General Purpose |
Part Status: | Obsolete |
Packaging: | Tube |
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The VND3NV04-1 is a high-speed MOSFET Analog Switch from STMicroelectronics. It is classified as a Power Management Integrated Circuit (PMIC) and falls under the category of power distribution switches, load drivers, and other related components. It is an integrated circuit that is used to provide superior load driving performance and switching speed in applications such as power management, audio processing, and communication devices.
The application field of the VND3NV04-1 is mainly used in automotive, industrial, consumer, and computing systems. It is designed to function as a high-speed analog switch, able to switch between positive voltages with a low on-resistance and a low power consumption. The less than 4mΩ resistance allows for a significant reduction in power consumption and an improved signal-to-switch ratio when compared to traditional solutions.
The working principle of the VND3NV04-1 is based on its monolithic two-gate MOSFET structure. The two gates are connected in series, providing voltage-dependent switching between them. The gate of one path is a dedicated high-speed input signal gate, while the gate of the other path is a dedicated high-speed high-voltage output gate. The combination of these two gates allows for a very fast switch-on time and a low power consumption while still maintaining a high signal-to-switch ratio.
The switching speed of the VND3NV04-1 is a very important performance parameter. It is designed to offer low rDS(ON) and very fast switching speeds of up to 10ns. This is especially useful for applications where the load can be switched quickly without any significant power loss. The high on-resistance of the VND3NV04-1 also allows for a significant reduction in power consumption compared to other solutions. The low input capacitance of the VND3NV04-1 also helps to reduce power consumption as no additional components are required.
The VND3NV04-1 has a very high signal-to-switch ratio, meaning that there is very little power being lost in the switching process. This is important for applications requiring accurate signal-to-switch ratio. The low threshold voltage and low leakage current ensure a low power consumption. The low-power operation of the VND3NV04-1 makes it an ideal solution for applications where power efficiency is a critical factor.
In conclusion, the VND3NV04-1 is a very high-speed MOSFET Analog Switch by STMicroelectronics. It is classified as a PMIC Power Management Integrated Circuit and falls into the category of power distribution switches and load drivers. It has a high signal-to-switch ratio, a low on-resistance, and fast switching speeds of up to 10ns. The low threshold voltage and low leakage current ensures a low power consumption. These features make the VND3NV04-1 an ideal solution for automotive, industrial, consumer, and computing applications.
The specific data is subject to PDF, and the above content is for reference
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