VND3NV04-E Allicdata Electronics
Allicdata Part #:

VND3NV04-E-ND

Manufacturer Part#:

VND3NV04-E

Price: $ 0.50
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: MOSFET OMNIFETII 40V 3.5A DPAK
More Detail: N/A
DataSheet: VND3NV04-E datasheetVND3NV04-E Datasheet/PDF
Quantity: 1000
1 +: $ 0.50000
10 +: $ 0.48500
100 +: $ 0.47500
1000 +: $ 0.46500
10000 +: $ 0.45000
Stock 1000Can Ship Immediately
$ 0.5
Specifications
Voltage - Supply (Vcc/Vdd): Not Required
Base Part Number: VN*3NV
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature: -40°C ~ 150°C (TJ)
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Features: --
Input Type: Non-Inverting
Rds On (Typ): 120 mOhm (Max)
Current - Output (Max): 3.5A
Series: OMNIFET II™, VIPower™
Voltage - Load: 36V (Max)
Interface: On/Off
Output Type: N-Channel
Output Configuration: Low Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Tube 
Description

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The VND3NV04-E is a field-effect, monolithic Power Distribution Switch intended for load switching applications. It provides high current-carrying capability, low Ron, and uncompromised on-state characteristics. The VND3NV04-E can be used in a variety of applications such as automotive systems, power supplies, and DC-DC converters.

The VND3NV04-E is designed to provide controlled current flow from a supply voltage to a load connected across its output terminals. When the device is off, it provides a high impedance path between the supply voltage and the load. The VND3NV04-E is designed using a SIPMOS technology with a built-in latch preventing catastrophic turn–on or shoot-through current.

The VND3NV04-E has an integrated reverse battery protection providing a safe environment when the supply voltage is reversed. It has two operating modes, Logic-level Control and Non-Logic Level Control. The device is characterized by low on-resistance, low leakage current, low voltage drops, and superior thermal characteristics.

The VND3NV04-E working principle is based on the MOSFET technology. When the device is in its "off" status, the drain-source resistance is very high and no current can pass through the MOSFET. When a voltage signal is applied to the gate, it induces the channel region of the MOSFET, allowing electron flow from the drain to the source. This generates a current flow in the circuit.

In order to ensure steady current flow, a voltage drop across the VND3NV04-E is necessary. The voltage drop value is defined by its Rds (ON) value. The device can be turned off by decreasing the gate voltage to below the Threshold Voltage. This way the channel region is closed and the device enters its "off" mode.

The VND3NV04-E can be used in various applications such as automotive and industrial systems. The combination of low Rds(ON) and fast switching time make the VND3NV04-E suitable for controlling high side loads over a wide range of current values. It is also well-suited for use in DC-DC converters and other circuits requiring tight control of current flow.

In summary, the VND3NV04-E is an ideal solution for applications requiring a high-performance Power Distribution Switch with high current capability, low Ron, and fast switching time. With its integrated reverse battery protection, the device provides a safe environment for controlling high side loads in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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