VND5160AJ-E

Voltage - Supply (Vcc/Vdd):	Not Required
Base Part Number:	VND5160
Supplier Device Package:	PowerSSO-12™
Package / Case:	PowerSSO-12
Operating Temperature:	-40°C ~ 150°C (TJ)
Fault Protection:	Current Limiting (Fixed), Over Temperature, Over Voltage
Features:	Auto Restart
Input Type:	Non-Inverting
Rds On (Typ):	160 mOhm (Max)
Current - Output (Max):	3.8A
Series:	VIPower™
Voltage - Load:	4.5 V ~ 36 V
Interface:	On/Off
Output Type:	N-Channel
Output Configuration:	High Side
Ratio - Input:Output:	1:1
Number of Outputs:	2
Switch Type:	General Purpose
Part Status:	Active
Packaging:	Tube

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VND5160AJ-E is a low on-resistance, low input-output capacitance, automotive qualified N-Channel power MOSFET by STMicroelectronics. Its main application field is power distribution switches, load drivers, and other automotive solutions.The device is designed with a low on-resistance of only 20 milliohm, very low voltage rating of 6.5V, and an input to output capacitance of 7 pF. The very low on-resistance and capacitance allows the device to be used in switching applications where switching speed and noise are important, such as power management ICs (PMICs) used in automotive applications. This is because the very low on-resistance and capacitance minimize the power dissipation and noise generated by the power MOSFET operation.The device also features an integrated gate protection diode, which helps to clamp high frequency transients, thus helping to protect the device from being potentially damaged. Furthermore, the device is optimized for high-side drive applications, with a wide VGS rating range that covers the applications voltage of most automotive solutions.The device works by using a source-drain voltage (VDS) to conduct the current between the source and drain of the MOSFET. The field-effect transistor (FET) is then switched on or off depending on the voltage applied to the gate terminal (VGS) and the source-drain voltage (VDS). When the gate voltage is above the threshold voltage (Vgsth), the device will be on and can supply current from the source to the drain according to the Ohm’s law. When the Vgs is below the Vgsth, the device will be off and will not conduct current between the source and drain.In short, the VND5160AJ-E is an automotive qualified N-channel power MOSFET designed for use in power distribution switches, load drivers, and other automotive solutions. Its low on-resistance of 20 milliohm, low voltage rating of 6.5V, and low input to output capacitance of 7pF make it ideal for switching applications where switching speed and noise are important. Additionally, the device has an integrated gate protection diode, is optimized for high-side drive applications, and works by using VDS and VGS to switch on or off the device.

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