VND5E050KTR-E Allicdata Electronics

VND5E050KTR-E Integrated Circuits (ICs)

Allicdata Part #:

497-11701-2-ND

Manufacturer Part#:

VND5E050KTR-E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: IC SW M0-5 2CH 27A DGTL PWRSSO24
More Detail: N/A
DataSheet: VND5E050KTR-E datasheetVND5E050KTR-E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Voltage - Supply (Vcc/Vdd): Not Required
Base Part Number: VND5E050
Supplier Device Package: PowerSSO-24™
Package / Case: 24-SOP (0.295", 7.50mm Width) Exposed Pad
Operating Temperature: -40°C ~ 150°C (TJ)
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Features: Auto Restart
Input Type: Non-Inverting
Rds On (Typ): 50 mOhm (Max)
Current - Output (Max): 19A
Series: VIPower™
Voltage - Load: 4.5 V ~ 28 V
Interface: On/Off
Output Type: N-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 2
Switch Type: General Purpose
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The VND5E050KTR-E is an integrated power MOSFET suitable for high side load switching and driving applications. It is designed for use in automotive environments where a wide input voltage range is used. The device is capable of operating up to 500mA output current and can be used in a variety of automotive systems such as engine control systems, ABS systems, power steering systems, transmission systems, and audio systems.

Application Field and Working Principle of VND5E050KTR-E

The VND5E050KTR-E is a power MOSFET designed for automotive applications and is suitable for high side load switching and driving. The device has a wide input voltage range of 8.5V to 32V, suitable for applications such as engine control systems, ABS systems, power steering systems, transmission systems, and audio systems. The device is capable of operating up to 500mA output current and can be used in a variety of automotive systems. It is constructed with an N-channel depletion mode MOSFET, a small size and low insertion loss.

The VND5E050KTR-E is composed of two integrated power MOSFETs: a control MOSFET with a protective Zener diode, and a sense MOSFET. The control MOSFET is an N-channel depletion mode device that is operated in the linear region in order to maximize the drain-source voltage. The sense MOSFET is a P-channel Enhancement mode device which provides the on/off control of the load current. The P-channel MOSFET is the high side switch, which is the main component for the load current carrying capability. The control MOSFET is used to control the voltage drop across the load and protect the load from overvoltage.

The VND5E050KTR-E is capable of operating with a wide input voltage range based on the application. This device operates in both PWM and linear mode, allowing for a variety of applications. In PWM mode, the device is able to respond to the PWM signal in order to switch the load current on and off and supply the load with the required current. In linear mode, the device is able to control the voltage drop across the load, maintaining a constant voltage drop.

The VND5E050KTR-E is an integrated power MOSFET used in automotive applications and is suitable for high side load switching and driving. The device is designed for use in a wide variety of automotive systems and operates with a wide input voltage range. The device is capable of controlling the voltage drop across the load, providing the load with the necessary current. The device can be operated in both PWM and linear mode, allowing for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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