VNV10N0713TR Allicdata Electronics
Allicdata Part #:

VNV10N0713TR-ND

Manufacturer Part#:

VNV10N0713TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: MOSFET OMNIFET 70V 10A POWERSO10
More Detail: N/A
DataSheet: VNV10N0713TR datasheetVNV10N0713TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Supply (Vcc/Vdd): Not Required
Base Part Number: VN*10N
Supplier Device Package: 10-PowerSO
Package / Case: PowerSO-10 Exposed Bottom Pad
Operating Temperature: --
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Features: --
Input Type: Non-Inverting
Rds On (Typ): 100 mOhm (Max)
Current - Output (Max): 7A
Series: OMNIFET™, VIPower™
Voltage - Load: 55V (Max)
Interface: On/Off
Output Type: N-Channel
Output Configuration: Low Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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VNV10N0713TR is a device found in PMIC – Power Distribution Switches, Load Drivers. This device is used for power management and control applications. It is a monolithic MOSFET switch with a breakdown voltage of 10V and charge and discharge current of 10A.

The device is composed of an integrated MOSFET, an independent gate driver and a charge pump circuit. The power distribution switch section contains two channels of power distribution and three loading channels. It is used for switching power between a single power supply and multiple devices. During the power distribution process, the load current will be transferred from a matching load device to the power supply, and then from the external power supply to a load device. The symmetrical control circuit of the two channels of power distribution can ensure the same start and end voltage.

The VNV10N0713TR also has a charging pump circuit, which is used to generate an integrated gate drive voltage which is proportional to the gate charge of the MOSFET. It also provides dynamic power management functions such as high dynamic range power control and short-time overload protection. The charge pump circuit consists of a voltage multiplier, an adaptive voltage source and two charging capacitors.

The integrated MOSFET can be used as a high side switch to switch the Load device from the power supply or as a low side switch to control the load from the supply. The input control signal can be used to operate the power switch which turns on and off the power to a load. The gate driver circuit is responsible for providing the necessary voltage for the MOSFET switch. It also has a protection circuit that shuts off the power to a load when the input current exceeds its rated limit.

The VNV10N0713TR device can be used in a variety of applications such as battery charging and management, automotive electronic system control, power supplies, motor drives, and industrial machinery control. It is also a good choice for space applications where low current, high voltage, and low on-resistance are required.

In conclusion, the VNV10N0713TR device is a powerful and reliable power management device for controlling and distributing power in a number of applications. It offers a wide range of features such as high dynamic range power control, charge pump circuits for generating gate drive voltages, and protective features for overload protection. This makes it a well-suited choice for a variety of applications where a reliable power control solution is required.

The specific data is subject to PDF, and the above content is for reference

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